Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs

Abstract

Ultrahigh-voltage SiC flip-type n-channel implantation and epitaxial (IE)-IGBTs were developed, and the static and dynamic performance was investigated. A large device (8 mm × 8mm) with a blocking voltage greater than 16 kV was achieved, and an on-state current of 20 A was obtained at the low on-state voltage (Von) of 4.8 V. RonAdiff was 23 mΩ·cm2 at Von = 4.8 V. In order to evaluate the switching characteristics of the IE-IGBT, ultrahigh-voltage power modules were assembled. A chopper circuit configuration was used to evaluate the switching characteristics of the IE-IGBT. Smooth turn-off waveforms were successfully obtained at VCE = 6.5 kV and ICE = 60 A in the temperature range from room temperature to 250°C.

Temperature dependence of forward characteristics for ultrahigh-voltage SiC p–i–n diodes with a long carrier lifetime

“…For ultrahigh-voltage (UHV: >10 kV) applications such as high-voltage DC transmission and power supplies for particle accelerators, the specific onresistance of SiC unipolar devices becomes very high (>100 mΩ cm 2 ), and bipolar devices will be more attractive, owing to the conductivity modulation effect of thick voltageblocking layers. Thus far, UHV SiC p-i-n diodes [4][5][6][7][8] and switching devices [9][10][11][12] with superior performance have been demonstrated, although "bipolar degradation" induced by basal-plane dislocations is still an obstacle for highly reliable operation of SiC bipolar devices. 13) Improvement of forward characteristics for high-voltage SiC p-i-n diodes was first reported by Storasta et al, who utilized carbon ion implantation and subsequent annealing to enhance carrier lifetimes.…”

Theoretical Analysis of ON-State Performance Limit of 4H-SiC IGBT in Field-Stop Technology

“…The first 4H-SiC IGBT was reported in 1999 [8] and the early fabricated SiC IGBTs were mostly p-channel type due to easy availability and low resistance of n + substrates [30]. After SiC epitaxial growth and fabrication technologies became mature, n-channel SiC IGBTs were developed with thick free-standing SiC epitaxial layers and various substrate removal/grinding processes [19,24,27,29]. As the electron mobility is nearly 8 times higher than the hole mobility in 4H-SiC, n-channel IGBTs are more favored than p-channel IGBTs due to lower on-state voltage drops and faster switching speeds [21,31].…”

A New SiC Planar-Gate IGBT for Injection Enhancement Effect and Low Oxide Field

“…A feasible fabrication procedure of the new SiC IGBT is proposed with a set of established process steps in conventional planar gate SiC IGBT [12,[41][42][43]. The proposed fabrication flow is illustrated in Figure 10.…”