Theoretical Analysis of ON-State Performance Limit of 4H-SiC IGBT in Field-Stop Technology

Luo, Peng; Madathil, Sankara Narayanan Ekkanath

doi:10.1109/ted.2020.3033268

Cited by 4 publications

(1 citation statement)

References 58 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Depending on the semiconductor device, for wide band gaps, GaN IGBTs reach only 1650 V BV, while SiC IGBTs are reported to reach up to 15 kV or even 20 kV. This is mainly due to the simulated IGBT drift region of only 7 µm, while the reported SiC IGBT drift region is 150 µm [23,24]. We have analyzed above the J2 reverse bias of IGBT in the withstand voltage state, and the depletion region extends mainly in the drift region, which means that the drift region bears most of the voltage, so the thickness of the drift region determines the voltage level of the device.…”

Section: Off-state Characteristicsmentioning

confidence: 97%

Simulation study of a novel vertical GaN-based FS-IGBT

Wang¹,

Shaofei²,

Zhang³

et al. 2022

Semicond. Sci. Technol.

View full text Add to dashboard Cite

In this paper, a novel GaN-based FS-IGBT is designed, which combines GaN-based Fin-MOS with the conventional material FS-IGBT, and the static and dynamic electrical characteristics of the device are simulated by SILVACO. The results show that the structure has a high saturation current (Ion,sat) density of 155kA/cm2 at 10V gate voltage (Vge), an on-state voltage (Von) of 3.5V, a breakdown voltage (BV) of 1650V, and a switching speed of nanoseconds. The characteristics of the device are analyzed and compared with Fin-MOS. The results demonstrate that the vertical GaN-based device can display both high current density and high breakdown voltage due to the FS layer that adjusts the electric field distribution in the N-drift region. The paper also analyzes the selection of device parameters and feasibility of device manufacturing based on the existing material growth method and device manufacturing technology.

show abstract

Section: Off-state Characteristicsmentioning

confidence: 97%