Instrument for research on interfaces and surfaces

Abstract

We describe an instrument designed for studying the electronic structure of bulk, surface, and deep solid–solid interface. The analysis is made by soft-x-ray emission spectroscopy induced by electron bombardment. The target is placed under ultrahigh vacuum and can be prepared and treated in situ. High resolution is achieved both as concerns the photon energy and the electron-beam energy. Tests have been made in the dispersive mode and in the characteristic isochromat mode. In both cases experimental resolution is in good agreement with the expected one.

Spectroscopic study of interfaces in Al/Ni periodic multilayers

“…They are dispersed by a high-resolution (10-10) quartz (for Al K emission) or (10-10) beryl (for Ni L emission) bent crystal and detected in a gas-flux counter working in the Geiger regime. The spectral resolution ∆E/E is estimated to be ~ 5000 in the Al K range and ~ 1500 in the Ni L range [27]. The current density of the electrons reaching the sample is set to less than 1 mA.cm -2 to avoid any evolution of the sample.…”

Analysis of periodic Mo/Si multilayers: Influence of the Mo thickness

“…This emission is very sensitive to the physico-chemical state of the silicon atoms [8][9]. The X-ray analysis was performed in a high-resolution bent-crystal soft X-ray spectrometer [10] using an InSb (111) crystal at the first diffraction order.…”

Electronic structure of Ni and Mo silicides investigated by x-ray emission spectroscopy and density functional theory

“…All the emissions except the Si L 2,3 are collected using a high-resolution curved crystal Johann-type x-ray spectrometer. 42 In this apparatus, the working pressure is a few 10 −7 Pa. The ionization of the samples is produced by an electron beam with an electron current density of about 1m A / cm 2 .…”