Analysis of periodic Mo/Si multilayers: Influence of the Mo thickness

Maury, Hélène; André, Jean‐Michel; Guen, Karine Le; Mahne, Nicola; Giglia, Angelo; Nannarone, Stefano; Bridou, Françoise; Delmotte, F.; Jonnard, Philippe

doi:10.1016/j.susc.2008.12.002

Cited by 18 publications

(13 citation statements)

References 27 publications

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“…The large amount of Ru (about 4.7 nm) needed to close the Ru layer for our Ru-on-Si system compared to other metal-silicon systems, 46,47 has raised some doubts about the causes of this huge intermixing. A number of factors may contribute to the total intermixing process, such as sputtering induced intermixing during Ar + bombardment, diffusion based intermixing between layers, availability of both ad-atoms and substrate atoms during deposition, and Si surface segregation.…”

Section: Surface Coverages Closed Layer Determination and In-deptmentioning

confidence: 96%

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

Ribera

Kruijs

Sturm

et al. 2016

Journal of Applied Physics

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In vacuo high-sensitivity low energy ion scattering (HS-LEIS) has been used to investigate the initial growth stages of DC sputtered Ru on top of Si, SiN and SiO2. The high surface sensitivity of this technique allowed an accurate determination of surface coverages and thicknesses required for closing the Ru layer on all three substrates. The Ru layer closes (100% Ru surface signal) at about 2.0, 3.2 and 4.7 nm on top of SiO2, SiN and Si, respectively. In-depth Ru concentration profiles can be reconstructed from the Ru surface coverages when considering an error function like model. The large intermixing (4.7 nm) for the Ru-on-Si system is compared to the reverse system (Si-on-Ru), where only 0.9 nm intermixing occurs. The difference is predominantly explained by the strong Si surface segregation that is observed for Ru-on-Si. This surface segregation effect is also observed for Ru-on-SiN, but is absent for Ruon-SiO2. For this last system, in vacuo HS-LEIS analysis revealed surface oxygen directly after deposition, which suggests an oxygen surface segregation effect for Ru-on-SiO2. In vacuo XPS measurements confirmed this hypothesis based on the reaction of Ru with oxygen from the SiO2, followed by oxygen surface segregation.

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Section: Surface Coverages Closed Layer Determination and In-deptmentioning

confidence: 96%

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

Ribera

Kruijs

Sturm

et al. 2016

Journal of Applied Physics

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“…Figure 2 shows the in-depth profile of the dielectric function εz; δ for the following parameters: D 1, γ 0.4, δ 0.04, 0.1, 0.3, ε a 1.0, and Δε 0.2, computed from the Fourier series Eqs. (15) and (16). Exactly the same profiles are obtained from the direct computation using Eqs.…”

Section: Model For the In-depth Profilementioning

confidence: 96%

“…(15) and (16) into Eq. (10); this equation will provide the shape of ωK, in the vicinity of the Brillouin zone boundaries for which the value of the Bloch wavenumber takes the values…”

Section: Photonic Bandgaps In the Two-wave Approximationmentioning

confidence: 99%

Photonic bandgaps of periodic multilayers with diffuse interfaces

André

Jonnard

2013

J. Opt. Soc. Am. B

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The photonic bandgap of periodic multilayers with diffuse interfaces is calculated by considering an empirical model for the interdiffusion profile. The model for the diffuse profile is based on the error function Erf and a characteristic parameter σ. The model is valid for multilayer structures with an arbitrary layer thickness. It is shown that the width of the bandgap varies with the value of σ and the Brillouin zone boundary. Numerical examples are presented. It is suggested that measuring the ratio of the width of the bandgaps at different orders, that is, determining experimentally the ratio of the widths of the different Bragg peaks on a reflectivity curve, can allow estimation of the thickness of the interdiffusion layer.

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“…To determine the composition of the multilayer (especially to identify possible interfacial compounds), its emission spectrum is compared to that of reference compounds. This methodology is now routinely used to study complex materials, particularly various thin films and nanometric multilayers [10][11][12][13][14][15][16][17].…”

Section: X-ray Emission Spectroscopymentioning

confidence: 99%

Characterization of EUV periodic multilayers

Guen¹,

Hu²,

André³

et al. 2011

X-Ray Spectrometry

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Nanometric Co/Mg, Co/Mg/B 4 C, Al/SiC and Al/Mo/SiC periodic multilayers deposited by magnetron sputtering are studied in order to correlate their optical performances in the extreme ultraviolet (EUV) range to their structural quality. To that purpose, our recently developed methodology based on high resolution x-ray emission spectroscopy (XES) and x-ray and EUV reflectometry is now extended to nuclear magnetic resonance (NMR) spectroscopy and time-of-flight secondary ions mass spectrometry (ToF-SIMS). The analysis of the Co L and Mg K emission spectra shows that the Co and Mg atoms within the multilayers are in a chemical state equivalent to that of the atoms in the pure Co and Mg references respectively. But NMR spectra give evidence for a reaction between Co atoms and B and/or C atoms from B 4 C. The Al and Si K emission spectra do not reveal the formation of an interfacial compound in Al/SiC and Al/Mo/SiC. Only the roughness limits the optical quality of Al/SiC.The comparative analysis of the ToF-SIMS spectra of Al/SiC and Al/Mo/SiC indicates that the structural quality is enhanced when Mo is introduced within the stack.

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Analysis of periodic Mo/Si multilayers: Influence of the Mo thickness

Cited by 18 publications

References 27 publications

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

Photonic bandgaps of periodic multilayers with diffuse interfaces

Characterization of EUV periodic multilayers

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