Inspecting EUV mask blanks with a 193nm system

Stokowski, Stan; Glasser, Joshua; Inderhees, Gregg; Sankuratri, Phani

doi:10.1117/12.850825

Cited by 14 publications

(6 citation statements)

References 2 publications

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“…Several authors, including Stokowski et al, 22 have made the observation that comparing the interaction of light with flat, wide, Gaussian shaped surface defects to a similar interaction with spherical particles of equivalent volume leads to potentially false conclusions. The surface shapes, slopes, and curvatures that dictate scattering and reflection, for example, are significantly different between the two geometries.…”

Section: A Description Of the Test Maskmentioning

confidence: 99%

Actinic characterization of extreme ultraviolet bump-type phase defects

Goldberg¹,

Mochi²

2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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Section: A Description Of the Test Maskmentioning

confidence: 99%

Actinic characterization of extreme ultraviolet bump-type phase defects

Goldberg¹,

Mochi²

2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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“…To detect critical phase defects on an EUVL mask blank, several kinds of actinic and non-actinic inspection techniques were developed and evaluated for their inspection capabilities. [1][2][3][4][5] Besides development of techniques for inspecting multilayer-coated mask blank, understanding the impacts of phase defects on the printed pattern with varying sizes was also considered important in order to understand the critical defects. In the MIRAI-Selete's work, a technique for actinic inspection of EUVL mask blank utilizing dark-field imaging was developed with a 99% probability of detecting 1.2 nm-high and 40 nm-wide phase defect.…”

Section: Introductionmentioning

confidence: 99%

Phase defect printability analyses: dependence of defect type and EUV exposure condition

Terasawa¹,

Yamane²,

Arisawa³

et al. 2012

SPIE Proceedings

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Phase defect printability and imaging characteristics were investigated by using aerial image simulation to clarify the phase defect impact on patterns depending on defect types, and on exposure conditions. In particular, the difference between the impacts caused by the same size bump phase defect and pit phase defect on 28 nm ~ 16 nm L&S projected patterns were investigated by calculating line width variations. Aerial images of phase defects in an absence of any absorber pattern were also calculated, and the image intensity losses of the two types of defects were compared. For a dipole illumination with 0.25 NA (numerical aperture) the pit phase defect impact was found to be stronger than the bump phase defect impact, when the two defect widths were less than 70% of the half-pitch of L&S patterns on the mask. This occurrence was not foreseen by the defect image calculation. On the other hand, for circular illumination with 0.33 NA, the bump defect impact was found to be stronger than the pit phase defect impact, which was consistent with the defect image calculation results. The contribution of dipole illumination in lowering the phase defect impact was confirmed for both bump and pit phase defects.

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“…An EUV mask is of the reflective type composed of a glass substrate 150 Â 150 mm 2 in size, a Mo/Si multilayer coating, and absorber patterns. In EUV mask fabrication, there are specific issues of EUV lithography, such as phase defects [1][2][3][4][5][6][7][8] of the multilayer and the shadowing effect due to the oblique illumination. 9,10) Thus, EUV actinic inspection and metrology are required to evaluate the actinic feature of defect printability and critical dimension (CD) values.…”

Section: Introductionmentioning

confidence: 99%

Development of Coherent Extreme-Ultraviolet Scatterometry Microscope with High-Order Harmonic Generation Source for Extreme-Ultraviolet Mask Inspection and Metrology

Nakasuji

Tokimasa

Harada

et al. 2012

Jpn. J. Appl. Phys.

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In extreme-ultraviolet (EUV) lithography, defect-free mask production is one of the critical issues for the high-volume manufacturing of semiconductor devices. We developed a coherent EUV scatterometry microscope (CSM), which is a simple lensless system. The CSM records diffraction from mask patterns with a charge-coupled-device (CCD) camera directly, which is illuminated with a coherent EUV light. Since a practical standalone system is required by the industry, we developed a standalone CSM system employing a high-order harmonic generation (HHG) EUV source. The 59th high-order harmonic generation of 13.5 nm wavelength is pumped by a tabletop, 6 mJ, 32 fs, Ti:sapphire laser system. The EUV output energy of 1 µW is successfully achieved. We performed the observation of an EUV mask using the HHG-CSM system. The detection limit of the line defect size is improved to 2 nm for the high output power of the HHG EUV source.

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Inspecting EUV mask blanks with a 193nm system

Cited by 14 publications

References 2 publications

Actinic characterization of extreme ultraviolet bump-type phase defects

Actinic characterization of extreme ultraviolet bump-type phase defects

Phase defect printability analyses: dependence of defect type and EUV exposure condition

Development of Coherent Extreme-Ultraviolet Scatterometry Microscope with High-Order Harmonic Generation Source for Extreme-Ultraviolet Mask Inspection and Metrology

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