Actinic characterization of extreme ultraviolet bump-type phase defects

Goldberg, Kenneth A.; Mochi, Iacopo

doi:10.1116/1.3653257

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Amplitude and Phase Defects1

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Cited by 5 publications

(2 citation statements)

References 18 publications

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“…These programmed defects have previously been studied using various techniques. [7][8][9] They consist of squares of fixed height and varied width patterned onto the substrate before multilayer deposition. We imaged the defects using σ = 0.25 monopole illumination, an NA of 0.0825, and wavelength of 13.5 nm.…”

Section: Amplitude and Phase Defectsmentioning

confidence: 99%

Phase measurements of EUV mask defects

et al. 2015

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Section: Amplitude and Phase Defectsmentioning

confidence: 99%

Phase measurements of EUV mask defects

et al. 2015

Self Cite

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“…However, it is difficult to measure the actual CDs of extreme ultraviolet (EUV) lithography masks, given that the optical properties of the mask materials are wavelength specific and the angle of incidence of the EUV light is oblique. [1][2][3] Several actinic mask inspection and metrology techniques have been developed for use with EUV masks, [4][5][6][7][8][9] and mask contamination is mostly investigated through topography analysis. 10 However, there is no appropriate tool to investigate the effects of mask contamination on the imaging properties.…”

Section: Introductionmentioning

confidence: 99%

Actinic critical dimension measurement of contaminated extreme ultraviolet mask using coherent scattering microscopy

Lee

Hong

Ahn

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors evaluated the feasibility of using coherent scattering microscopy (CSM) as an actinic metrology tool by employing it to determine the critical dimension (CD) and normalized image log-slope (NILS) values of contaminated extreme ultraviolet (EUV) masks. CSM was as effective as CD scanning electron microscopy (CD-SEM) in measuring the CD values of clean EUV masks in the case of vertical patterns (nonshadowing effect); however, only the CSM could detect shadowing effect for horizontal patterns resulting in smaller clear mask CD values. Owing to weak interaction between the low-density contaminant layer and EUV radiation, the CSM-based CD measurements were not as affected by contamination as were those made using CD-SEM. Furthermore, CSM could be used to determine the NILS values under illumination conditions corresponding to a high-volume manufacturing tool.

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