Inspecting EUV mask blanks with a 193-nm system

Glasser, Joshua; Stokowski, Stan; Inderhees, Gregg

doi:10.1117/12.865490

Cited by 2 publications

(3 citation statements)

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“…This tool is the only blank inspection tool so far to support 3Xnm HP node from previous experiment and benchmarking. [7] …”

Section: Defect On Euv Mask and Inspection Toolmentioning

confidence: 97%

“…The simulation results are compared with the inspection limits of current and future BI tools in figure 11. [7,11] Minimum printable defect size on the blank in SEVD is 23/15/13/9nm in 3X/22/16/11nm HP, respectively. It is considered that Teron BI systems (61X and 63X) can inspect printable defects down to 22nm HP node.…”

Section: Required Blank Inspection For Next Device Generationmentioning

confidence: 99%

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Printability and inspectability of defects on EUV blank for 2xnm hp HVM application

et al. 2012

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The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. Recently both blank suppliers achieved 1-digit number of defects at 60nm in size using their M1350s. In this paper, a full field EUV mask with Teron 61X blank inspection is fabricated to see the printability of various defects on the blank using NXE 3100. Minimum printable blank defect size is 23nm in SEVD using real blank defect. Current defect level on blank with Teron 61X Phasur has been up to 70 in 132 X 132mm 2 . More defect reduction as well as advanced blank inspection tools to capture all printable defects should be prepared for HVM. 3.6X reduction of blank defects per year is required to achieve the requirement of HVM in the application of memory device with EUVL. Furthermore, blank defect mitigation and compensational repair techniques during mask process needs to be developed to achieve printable defect free on the wafer.

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“…This tool is the only blank inspection tool so far to support 3Xnm HP node from previous experiment and benchmarking. [7] …”

Section: Defect On Euv Mask and Inspection Toolmentioning

confidence: 97%

Section: Required Blank Inspection For Next Device Generationmentioning

confidence: 99%

Printability and inspectability of defects on EUV blank for 2xnm hp HVM application

et al. 2012

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“…[1][2][3] The implementation of the EUV lithography into the semiconductor industry is of concern because phase defects as small as 1 nm in height (or depth) being embedded in the mask blank are printable on wafers. To detect such printable phase defects on an EUVL mask blank, several kinds of non-actinic inspection techniques [4][5][6][7][8] and actinic inspection techniques [9][10][11][12][13][14][15][16][17][18] have been developed, and their inspection capabilities have been evaluated. Besides the development of the techniques for inspecting multilayercoated mask blank, an understanding of the impacts of the varying size phase defects printed on wafer is necessary in order to define critical defects.…”

Section: Introductionmentioning

confidence: 99%

Simulation Analysis of the Characteristics of a High Magnification Imaging Optics for the Observation of Extreme Ultraviolet Lithography Mask to Predict Phase Defect Printability

Terasawa¹,

Arisawa²,

Amano³

et al. 2013

Jpn. J. Appl. Phys.

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By employing simulation, we analyzed the characteristic of the optics of high-magnification multilayer-coated mirror employed for the examination of extreme ultraviolet lithography (EUVL) mask, and we also examined the performance of phase defect printability prediction. The imaging optics comprises Schwarzschild optics and a concave mirror; and it is modeled as an imaging means with an annular-shaped pupil. In this simulation, tilted coherent illumination that was successfully applied in an EUV microscope constructed at a beamline of the NewSUBARU, was assumed. Observation images of mask patterns affected by phase defects were simulated assuming EUVL masks representing half pitches of 16 and 11 nm generations; and those simulated results were compared with the simulated reduction-projection images on wafer formed by an exposure tool. Although the high-magnification observation optics does not completely emulate the printed pattern images on wafer it predicts the existence of phase defects and predict the value of their impacts.

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Inspecting EUV mask blanks with a 193-nm system

Cited by 2 publications

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Printability and inspectability of defects on EUV blank for 2xnm hp HVM application

Printability and inspectability of defects on EUV blank for 2xnm hp HVM application

Simulation Analysis of the Characteristics of a High Magnification Imaging Optics for the Observation of Extreme Ultraviolet Lithography Mask to Predict Phase Defect Printability

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