Insights into the design principles of JF-ED-VTFET for biosensing application

Abstract

In this research article, we have designed a junction-free electrostatically doped vertical tunnel field-effect transistor (JF-ED-VTEFT) for label-free biosensing applications. We incorporated a nano-cavity within the gate-oxide layer near the source end of the FET to enable the detection of biomolecules based on the principle of dielectric modulation and without the requirement of external labeling. The proposed biosensor is thoroughly analyzed, considering various aspects such as electric field, energy band, transfer characteristics, and sensitivity parameters including energy band diagram, ON-current, ION/IOFF ratio, electrical analysis, and surface potential characteristics. The investigation of sensitivity encompasses practical challenges, such as different filling factors and step-profiles resulting from steric hindrance. Moreover, the impact of temperature variations and nano-cavity dimensions on the performance of the biosensor is assessed. To evaluate the effectiveness of the biosensor, representative biomolecules are considered for performance assessment, providing insights into the capacity of the biosensor in detecting and analyzing these molecules.

Performance optimization of AlGaAs and Al x Ga 1−x As based SM-TM-DG-JL-TFET for an analog/RF applications

“…Lately, specific integrated circuit (IC) manufacturers like IBM and Intel have started employing compound materials in the manufacturing of their devices. The process of scaling down devices to smaller sizes adds to the improvement of their speed [1,2]. As the device's dimensions drop, the length of the channel can be proportionally reduced to align with the device's.…”