Synergistic Effect of Ferroelectric and HfO₂/SiO₂ Hetero dielectrics in Junctionless FET for Analog and RF Applications

Abstract

The synergistic effect of ferroelectric and HfO2/SiO2 (Hafnium dioxide/ Silicon dioxide) hetero dielectrics in double gate Junctionless Field Effect Transistor is investigated using TCAD Tool. The study encompasses a wide range of parameters, allowing for a detailed examination of the impact of hysteresis on the overall functionality of the double gate Junctionless FET. One crucial aspect of the investigation involves examining the analog and RF performance of the device. The high transconductance (gm) of 5.42 mS, a gain of 95 dB (decibel), a cut‐off frequency of 553.9 GHz (gigahertz), a gain transconductance frequency product (GTFP) of 50.9 THz (terahertz), and a gain bandwidth product (GBW) of 188 GHz shows its great potential for analog and RF signal processing applications as well as for other high data rate wireless applications such as Machine Learning (ML), Artificial Intelligence (AI) and Internet‐of‐Thing (IoT). The low transit time of 17 ns (nano second), with high ION/IOFF ratio range of 107 shows that the device has good switching behavior also. This aspect of the research aims to unveil the device's viability for analog and high‐frequency applications, contributing valuable insights to the emerging electronic technologies field.