InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates

Sokura, L A; Parkhomenko, Ya. A.; Moiseev, K. D.; Nevedomsky, V. N.; Берт, Н. А.

doi:10.1134/s1063782617080310

Cited by 9 publications

(4 citation statements)

References 10 publications

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“…Advantages of using InSb compared with other compound semiconductors originate from its intrinsic properties as it is a well‐known bulk material for infrared (IR) detectors . Further engineering of InSb material properties is possible by realizing InSb nanostructures …”

Section: Introductionmentioning

confidence: 99%

“…In fact, InSb nanostructure could be realized in different matrices such as in GaAs, GaSb, and InAsSb . Moreover, various growth techniques such as molecular beam epitaxy (MBE), metalorganic vapor phase epitaxy, and liquid phase epitaxy can be applied. Due to different growth techniques, material combinations, and growth conditions, varieties of InSb nanostructures are realized and reported.…”

Section: Introductionmentioning

confidence: 99%

“…Due to different growth techniques, material combinations, and growth conditions, varieties of InSb nanostructures are realized and reported. For some conditions, intrinsic defects are observed in the grown structures which limit the usage of the nanostructure for device applications . However, by modifying the growth procedure coherent InSb nanostructures can be obtained.…”

Section: Introductionmentioning

confidence: 99%

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Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

Posri

Thainoi

Kiravittaya

et al. 2018

Phys. Status Solidi A

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In this study, the growth and photoluminescence (PL) properties of InSb/ GaSb nano-stripes grown by molecular beam epitaxy on (001) GaSb substrate are reported. In situ reflection high-energy electron diffraction observation during InSb growth shows that the growth of InSb on GaSb surface is in Stranski-Krastanov mode and results in nano-stripe formation. The obtained nano-stripes have rectangular-based structure with the height of 25.2 AE 4.0 nm and they are elongated along [110] direction. PL emission from buried InSb/GaSb nano-stripes shows the emission peak at %1850 nm (0.67 eV). According to the emission energy and the structural information, low In content of %0.24 in nominally grown InSb/GaSb nano-stripe is estimated. Power-dependent PL spectroscopy shows a linear relation between integrated PL intensity and the excitation power. Thermal activation energy of %20 meV from InSb nano-stripe emission is extracted from the temperaturedependent PL spectroscopy.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

Posri

Thainoi

Kiravittaya

et al. 2018

Phys. Status Solidi A

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“…In heteroepitaxy of solid solutions on binary substrates, the array mismatch between the thin film and the substrate, as well as the substrate misorientation [7] have a significant influence on the crystal structure and morphology of the deposited material. Previously, researchers have studied GaSb-based heterostructures that do not contain Bi [8][9][10]. The molecular beam epitaxy of GaInAsSb solid solution with Bi fraction of 0.13% on GaSb (100) substrates [5] has been known to be realized by now.…”

mentioning

confidence: 99%

Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates

Pashchenko

O.V.

Lunin

et al. 2022

Technical Physics Letters

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GaInAsSbBi solid solutions with different Bi contents are synthesized on n-GaSb substrates with a misorientation of 6o between the (100) and (111)A planes. Structural properties and morphology of GaInAsSbBi thin films are studied. Transmission electron microscopy and X-ray diffraction have shown that the films have a polycrystalline structure. It is found that an increase in the Bi concentration in the solid solution leads to a decrease in the average size of the region of coherent scattering by (111) reflection from 20 to 5 nm. It is shown that in films with a lower content of Bi, the thickness of the transition amorphous layer at the ?layer-substrate? heterointerface decreases. Keywords: solid solutions, GaInAsSbBi, GaSb, III-V compounds.

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“Quantum dots: Perspectives in next-generation chemical gas sensors” ‒ A review

Galstyan

2021

Analytica Chimica Acta

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InSb quantum dots produced by liquid-phase epitaxy on InGaAsSb/GaSb substrates

Cited by 9 publications

References 10 publications

Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

Structural properties of GaInAsSbBi solid solutions grown on GaSb substrates

“Quantum dots: Perspectives in next-generation chemical gas sensors” ‒ A review

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