Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

Posri, Supeeranat; Thainoi, Supachok; Kiravittaya, Suwit; Tandaechanurat, Aniwat; Nuntawong, Noppadon; Sopitpan, Suwat; Yordsri, Visittapong; Thanachayanont, Chanchana; Kanjanachuchai, Songphol; Ratanathammaphan, Somchai; Panyakeow, Somsak

doi:10.1002/pssa.201800498

Cited by 4 publications

(2 citation statements)

References 33 publications

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“…In addition, the height of QNS is also limited, as the InSb adatoms do not have enough energy to migrate to the top of the QNSs due to the usage of low growth temperature. Observations of elongated nanostructures similar to InSb QNSs obtained in this work in other material systems have also been reported …”

Section: Resultssupporting

confidence: 83%

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy

Rongrueangkul

Srisinsuphya

Thainoi

et al. 2019

Physica Status Solidi (b)

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The dimensions and morphologies of quantum nanostructures are keys to controlling an operating wavelength to a desirable wavelength range due to the quantum effect. The dimension and morphology evolutions of InSb/InAs quantum nanostructures grown by molecular beam epitaxy with respect to the number of InSb monolayers (MLs) are investigated. The formation of the quantum nanostructures is dominated by lateral growth, in which the morphology is further elongated as the number of MLs is increased. Such an anisotropic growth is explained by the difference in the surface energy along each direction, which corresponds to different atomic arrangements in the crystalline structure of InSb. Cross‐sectional transmission electron microscopic images show a reduction in the lateral dimension and an increase in the height of the embedded InSb quantum nanostructures when they are embedded in the InAs matrix. The results herein provide a means for obtaining the precise control over dimensions and morphologies of the InSb/InAs nanostructures, which is essential for extending the operating wavelength further into the mid‐infrared region.

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Section: Resultssupporting

confidence: 83%

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy

Rongrueangkul

Srisinsuphya

Thainoi

et al. 2019

Physica Status Solidi (b)

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“…The antimonide-based (Sb-based) material system has been paid much attention due to their potential for optical devices in the 3-5 µm spectral regions exhibiting inter-band transitions. InSb-based heterostructures grown on GaSb or InAs substrates, exhibit a number of unique possibilities among III-V compound semiconductors in term of band structure engineering [1][2][3]. This is because InSb has the narrowest possible band gap and smallest carrier effective masses [4].…”

Section: Introductionmentioning

confidence: 99%

Electronic Structure and Optical Properties of Strained Type-II InAs<sub>x</sub>Sb<sub>1-x</sub>/InAs Quantum Dots for Mid-Infrared Applications

Yeap

Rybchenko

Itskevich

et al. 2023

DDF

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InSb-based self-assembled quantum dots (SAQDs) are very promising for the mid-infrared (3-5 μm) optical range. We have analysed the electronic structure and optical properties of InAsxSb1-x/InAs dots. In this paper, we present the results of the modelling of electronic structure and optical properties from photoluminescence (PL) measurement for InAsxSb1-x/InAs SAQDs, focusing on the effects of SAQD morphology and composition. In particular, we analyse the electronic structure of InAsxSb1-x/InAs SAQD of various shapes, aspect ratios and compositions. We also suggest a method of assessing the geometry and composition of InAsxSb1-x/InAs quantum dots using their optical spectra and limited microscopy information. The calculated transition energies agree well with the experimental results. The results show that the geometry of the dot can be estimated from the optical spectra if the composition is known, and vice versa.

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Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field

Lekwongderm

Chumkaew

Thainoi

et al. 2019

Journal of Crystal Growth

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Growth and Photoluminescence Properties of InSb/GaSb Nano‐Stripes Grown by Molecular Beam Epitaxy

Cited by 4 publications

References 33 publications

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy

Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy

Electronic Structure and Optical Properties of Strained Type-II InAs<sub>x</sub>Sb<sub>1-x</sub>/InAs Quantum Dots for Mid-Infrared Applications

Study on Raman spectroscopy of InSb nano-stripes grown on GaSb substrate by molecular beam epitaxy and their Raman peak shift with magnetic field

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