InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft &gt; 750GHz

Feng, Milton; Snodgrass, William

doi:10.1109/iciprm.2007.381208

Cited by 18 publications

(14 citation statements)

References 1 publication

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“…In our simulation, the lateral electric field was kept at 50 kV/cm and voltage was applied while varying it with channel length, which is also shown in the figure. Experimental extrinsic values of for InP high electron mobility transistors (HEMTs) 8) and InP heterojunction bipolar transistor (HBT) 9) are also plotted for comparison. The transit time for a monolayer graphene FET is very short, less than 0.1 ps at a channel length L ch of 65 nm even in a constant electric field.…”

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confidence: 99%

Performance Estimation of Graphene Field-Effect Transistors Using Semiclassical Monte Carlo Simulation

2008

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A semiclassical Monte Carlo simulation was run to estimate the performances of a monolayer and a bilayer (with vertical electric field of 1 V/nm applied) graphene-channel field-effect transistor (FET). The vertical field produces a band gap of 0.16 eV and gives semiconductive properties in the bilayer graphene. Electrons in monolayer graphene show a notable velocity overshoot of up to 7.6×107 cm/s. A sub-0.1 ps transit time is also expected in a 65-nm channel device. The performance of a bilayer graphene-channel FET is inferior to a monolayer graphene one, but comparable with that of an InP high electron mobility transistor (HEMT). This lower performance may be attributed to the electron effective mass produced by the vertical field.

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confidence: 99%

Performance Estimation of Graphene Field-Effect Transistors Using Semiclassical Monte Carlo Simulation

2008

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“…With further advances in crystal growth, quantum-well DLs [5], [6] and verticalcavity surface-emitting lasers (VCSELs) [7], [8] have been realized. Previously, we have reported record performance of high-speed, high current density, sub-micron heterojunction bipolar transistors (HBTs) [9], [10]. By inserting a quantum well into the base of the HBT, trading off electrical gain for optical generation, and fabricating a high-Q cavity, we have demonstrated a high performance quantum-well heterojunction bipolar transistor laser (QW-HBTL) [11], [12].…”

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confidence: 98%

Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature

Bambery

Tan

Feng

et al. 2013

IEEE Photon. Technol. Lett.

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Data are presented showing open-eye 20-Gb/s transmission for a quantum-well transistor laser operating at room temperature (25°C). The fast spontaneous recombination lifetime (∼30 ps) in the base region results in a resonance-free frequency response allowing demonstration of 20-Gb/s transmission with an I/I TH = 3. It is shown that higher temperature hastens the transition to the first excited state and improves bandwidth and eye-opening at low bias levels (I/I TH = 2). In addition, room temperature 20-Gb/s transmission through voltage modulation of a transistor laser via intracavity photon-assisted tunneling in the base-collector junction is reported.

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“…Although the current density which caused the Kirk effect in HBTs depended on the collector voltage, g o was not increased but decreased by the Kirk effect. [18][19][20] However, the component of the Kirk effect was difficult to separate from other components such as emitter resistance in DC characteristics.…”

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confidence: 99%

Reduction of Output Conductance in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region

Saito¹,

Miyamoto²

2012

Appl. Phys. Express

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In this paper, the reduction in the output conductance (go) of a vertical InGaAs channel metal–insulator–semiconductor field-effect transistor (MISFET) is reported. While vertical InGaAs channel MISFETs exhibit a high drain current density, their large go is a disadvantage. Monte Carlo simulation suggests that the large go might be caused by conduction band bending due to many space charges between the gate and drain. To prevent conduction band bending, a device in which the gate electrode overlaps with the drain region was proposed and fabricated. Consequently, go was decreased from 3.2 to 1 S/mm.

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InP Pseudormorphic Heterojunction Bipolar Transistor (PHBT) With Ft > 750GHz

Cited by 18 publications

References 1 publication

Performance Estimation of Graphene Field-Effect Transistors Using Semiclassical Monte Carlo Simulation

Performance Estimation of Graphene Field-Effect Transistors Using Semiclassical Monte Carlo Simulation

Voltage and Current Modulation at 20 Gb/s of a Transistor Laser at Room Temperature

Reduction of Output Conductance in Vertical InGaAs Channel Metal–Insulator–Semiconductor Field-Effect Transistor Using Heavily Doped Drain Region

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