InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

Wallentin, Jesper; Anttu, Nicklas; Asoli, Damir; Huffman, Maria; Åberg, Ingvar; Magnusson, Martin H.; Siefer, Gerald; Fuß-Kailuweit, Peter; Dimroth, Frank; Witzigmann, Bernd; Xu, Hongqi; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T.

doi:10.1126/science.1230969

Cited by 1,117 publications

(1,168 citation statements)

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“…Furthermore, GaAs nanowire-based solar cells can be grown on Si, easily resulting in a dual-junction device [7]. Proof-of-concept radial p-i-n GaAs nanowire solar cells have been demonstrated in the past [8][9][10][11][12][13]. Recently, it has been shown that the achievement of high efficiencies can only be obtained after the accurate design of the individual junction, the nanowire diameter, and density so that light absorption and conversion are maximized [14,15].…”

Section: Introductionmentioning

confidence: 99%

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

et al. 2015

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Nanowire diameter has a dramatic effect on the absorption cross-section in the optical domain. The maximum absorption is reached for ideal nanowire morphology within a solar cell device. As a consequence, understanding how to tailor the nanowire diameter and density is extremely important for high-efficient nanowire-based solar cells. In this work, we investigate mastering the diameter and density of self-catalyzed GaAs nanowires on Si(111) substrates by growth conditions using the self-assembly of Ga droplets. We introduce a new paradigm of the characteristic nucleation time controlled by group III flux and temperature that determine diameter and length distributions of GaAs nanowires. This insight into the growth mechanism is then used to grow nanowire forests with a completely tailored diameter-density distribution. We also show how the reflectivity of nanowire arrays can be minimized in this way. In general, this work opens new possibilities for the cost-effective and controlled fabrication of the ensembles of self-catalyzed III-V nanowires for different applications, in particular in next-generation photovoltaic devices.S Online supplementary data available from stacks.iop.org/NANO/26/105603/mmedia

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Section: Introductionmentioning

confidence: 99%

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

et al. 2015

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“…[10][11] In addition, semiconductor NW photovoltaics (PV) are emerging as a promising platform for the next generation solar cells that require a high efficiency at costs approaching grid parity. [12][13][14][15][16][17][18][19] In particular, p/i/n core-shell NWs demonstrate electrical and optical properties distinct from conventional planar materials: radial minority carrier separation with short diffusion lengths, and enhanced light absorption resulting from the cavities' subwavelength size. [12][13][14] Recently, crystalline Si NW PVs have been successfully demonstrated, exhibiting good electrical characteristics as represented by an open-circuit voltage of ~0.5V and very low leakage current of 1 fA.…”

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Design of Nanowire Optical Cavities as Efficient Photon Absorbers

et al. 2014

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Recent investigations of semiconductor nanowires have provided strong evidence for enhanced light absorption, which has been attributed to nanowire structures functioning as optical cavities. Precise synthetic control of nanowire parameters including chemical composition and morphology has also led to dramatic modulation of absorption properties. Here we report finite-difference time-domain (FDTD) simulations for silicon (Si) nanowire cavities to elucidate the key factors that determine enhanced light absorption. The FDTD simulations revealed that a crystalline Si nanowire with an embedded 20-nm-thick amorphous Si shell yields

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“…1,2 However, the high material cost has limited commercial applications. Direct integration of GaAs nanowires on Si is a potential solution to reduce material consumption and increase cost competitiveness.…”

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confidence: 99%

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Matteini¹,

Tütüncüoǧlu²,

Mikulik³

et al. 2016

Crystal Growth & Design

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Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore important for GaAs nanowire technologies. We show that the chemistry and morphology of the silicon oxide film controls liquid Ga nucleation position and shape; these determine GaAs nanowire growth morphology. We calculate the energies of formation of Ga droplets as a function of their volume and the oxide composition in several nucleation configurations. The lowest energy Ga droplet shapes are then correlated to the orientation of nanowires with respect to the substrate. This work provides the understanding and the tools to control nanowire morphology in self-assembly and pattern growth.

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InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

Cited by 1,117 publications

References 31 publications

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

Tailoring the diameter and density of self-catalyzed GaAs nanowires on silicon

Design of Nanowire Optical Cavities as Efficient Photon Absorbers

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

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