Solar cells are attractive candidates for clean and renewable power; with miniaturization, they might also serve as integrated power sources for nanoelectronic systems. The use of nanostructures or nanostructured materials represents a general approach to reduce both cost and size and to improve efficiency in photovoltaics. Nanoparticles, nanorods and nanowires have been used to improve charge collection efficiency in polymer-blend and dye-sensitized solar cells, to demonstrate carrier multiplication, and to enable low-temperature processing of photovoltaic devices. Moreover, recent theoretical studies have indicated that coaxial nanowire structures could improve carrier collection and overall efficiency with respect to single-crystal bulk semiconductors of the same materials. However, solar cells based on hybrid nanoarchitectures suffer from relatively low efficiencies and poor stabilities. In addition, previous studies have not yet addressed their use as photovoltaic power elements in nanoelectronics. Here we report the realization of p-type/intrinsic/n-type (p-i-n) coaxial silicon nanowire solar cells. Under one solar equivalent (1-sun) illumination, the p-i-n silicon nanowire elements yield a maximum power output of up to 200 pW per nanowire device and an apparent energy conversion efficiency of up to 3.4 per cent, with stable and improved efficiencies achievable at high-flux illuminations. Furthermore, we show that individual and interconnected silicon nanowire photovoltaic elements can serve as robust power sources to drive functional nanoelectronic sensors and logic gates. These coaxial silicon nanowire photovoltaic elements provide a new nanoscale test bed for studies of photoinduced energy/charge transport and artificial photosynthesis, and might find general usage as elements for powering ultralow-power electronics and diverse nanosystems.

The ability to control and modulate the composition1–4, doping1,3–5, crystal structure6–8 and morphology9,10 of semiconductor nanowires during the synthesis process has allowed researchers to explore various applications of nanowires11–15. However, despite advances in nanowire synthesis, progress towards the ab initio design and growth of hierarchical nanostructures has been limited. Here we demonstrate a ‘nanotectonic’ approach that provides iterative control over the nucleation and growth of nanowires and use it to grow kinked or zigzag nanowires in which the straight sections are separated by triangular joints. Moreover, the lengths of the straight sections can be controlled and the growth direction remains coherent along the nanowire. We also grow dopant-modulated structures in which specific device functions, including p-n diodes and field-effect transistors, can be precisely localized at the kinked junctions in the nanowires.

This tutorial review focuses on recent work addressing the properties and potential of semiconductor nanowires as building blocks for photovoltaic devices based on investigations at the single nanowire level. Two central nanowire motifs involving p-i-n dopant modulation in axial and coaxial geometries serve as platforms for fundamental studies. Research illustrating the synthesis of these structural motifs will be reviewed first, followed by an examination of recent studies of single axial and coaxial p-i-n silicon nanowire solar cells. Finally, challenges and opportunities for improving efficiency enabled by controlled synthesis of more complex nanowire structures will be discussed, as will their potential applications as power sources for emerging nanoelectronic devices.

Iron doping of nickel oxide films results in enhanced activity for promoting the oxygen evolution reaction (OER). Whereas this enhanced activity has been ascribed to a unique iron site within the nickel oxide matrix, we show here that Fe doping influences the Ni valency. The percent of Fe 3+ doping promotes the formation of formal Ni 4+ , which in turn directly correlates with an enhanced activity of the catalyst in promoting OER. The role of Fe 3+ is consistent with its behavior as a superior Lewis acid.water splitting | renewable energy | electrocatalysis | oxygen evolution reaction | catalysis

Nanowires represent a promising class of materials for exploring new concepts in solar energy conversion. Here we report the first experimental realization of axial modulation-doped p-i-n and tandem p-i-n(+) -p(+)-i-n silicon nanowire (SiNW) photovoltaic elements. Scanning electron microscopy images of selectively etched nanowires demonstrate excellent synthetic control over doping and lengths of distinct regions in the diode structures. Current-voltage (I-V) characteristics reveal clear and reproducible diode characteristics for the p-i-n and p-n SiNW devices. Under simulated one-sun solar conditions (AM 1.5G), optimized p-i-n SiNW devices exhibited an open circuit voltage (Voc) of 0.29 V, a maximum short-circuit current density of 3.5 mA/cm(2), and a maximum efficiency of 0.5%. The response of the short-circuit current versus Voc under varying illumination intensities shows that the diode quality factor is improved from n=1.78 to n=1.28 by insertion of the i-type SiNW segment. The temperature dependence of Voc scales as -2.97 mV/K and extrapolates to the crystalline Si band gap at 0 K, which is in excellent agreement with bulk properties. Finally, a novel single SiNW tandem solar cell consisting of synthetic integration of two photovoltaic elements with an overall p-i-n(+) -p(+)-i-n structure was prepared and shown to exhibit a Voc that is on average 57% larger than that of the single p-i-n device. Fundamental studies of such well-defined nanowire photovoltaics will enable their intrinsic performance limits to be defined.