InP/InGaAsP thin films based solar cells: Lattice mismatch impact on efficiency

Tarbi, A.; Chtouki, T.; Bouich, Amal; Elkouari, Y.; Erguig, H.; Migalska‐Zalas, A.; Aissat, A.

doi:10.1016/j.optmat.2022.112704

Cited by 20 publications

(8 citation statements)

References 20 publications

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“…SACPS-1D, over years, has proven to be a significant tool for understanding the physics of solar cells and it has been comprehensively used for perovskite solar cells [ 59 , 60 , 61 , 62 , 63 , 64 ]. SCAPS also calculates AC quantities, electron/hole densities, quantum efficiencies (QE%)/spectral response, total recombination currents, energy band diagrams, and current density vs. voltage characteristics [ 65 , 66 , 67 , 68 , 69 , 70 , 71 , 72 , 73 ] It is based on drift-diffusion differential equations and Poisson’s carrier (electron/hole transport) continuity equations [ 63 , 64 ].…”

Section: Numerical Analysismentioning

confidence: 99%

Investigation of the Surface Coating, Humidity Degradation, and Recovery of Perovskite Film Phase for Solar-Cell Applications

et al. 2022

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Presently, we inquire about the organic/inorganic cation effect on different properties based on structure, morphology, and steadiness in preparing a one-step solution of APbI3 thin films, where A = MA, FA, Cs, using spin coating. This study was conducted to understand those properties well by incorporating device modeling using SCAPS-1D software and to upgrade their chemical composition. X-ray diffraction (XRD) was used to analyze the crystal structures. Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were conducted to characterize the surface morphology; photoluminescence, Transmission Electron Microscopy (TEM), and a UV–Visible spectrometer helped us to study the optical properties. The (110) plane is where we found the perovskite’s crystalline structure. According to the XRD results and by changing the type of cation, we influence stabilization and the growth of the APbI3 absorber layer. Hither, a homogenous, smooth-surfaced, pinhole-free perovskite film and large grain size are results from the cesium cation. For the different cations, the band gap’s range, revealed by the optical analysis, is from 1.4 to 1.8 eV. Moreover, the stability of CsPbI3 remains excellent for two weeks and in a ~60% humid environment. Based on the UV–Visible spectrometer and photoluminescence characterization, a numerical analysis for fabricated samples was also performed for stability analysis by modeling standard solar-cell structures HTL/APbI3/ETL. Modeling findings are in good agreement with experimental results that CsPbI3 is more stable, showing a loss % in PCE of 14.28%, which is smaller in comparison to FAPbI3 (44.46%) and MAPbI3 (20.24%).

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Section: Numerical Analysismentioning

confidence: 99%

Investigation of the Surface Coating, Humidity Degradation, and Recovery of Perovskite Film Phase for Solar-Cell Applications

et al. 2022

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“…The majority of III-V materials have the main feature of forming the Wurtzite structure [9], with no centre of symmetry [10]. Due to lattice mismatch, a strain and polarization is created by piezoelectric and polarization effects [11].…”

Section: Introductionmentioning

confidence: 99%

Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction

Selmane

Cheknane

Khemloul

et al. 2023

Preprint

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Light-emitting devices (LEDs) with higher performance, lower energy demand and minimal environmental impact are needed. With wide-band gaps and high emission efficiencies, III-V nitride semiconductors are useful for LEDs in short-wavelength regions. A multiple quantum well (MQW LED), based on InGaN/GaN, is proposed. The structure involves GaN(n)/InxGa1−xN(i)/GaN(i)/AlGaN(p)/GaN(p), where GaN(n) and GaN(p) have different dopants to formulate the junction at which electric field occurs, InxGa1−xN(i) is a 3 nm-thick intrinsic quantum well with (x) as indium mole fraction, GaN(i) is barrier intrinsic layer and AlGaN(p) is a 15 nm-thick electron blocking layer (EBL). Simulation is performed by Tcad-Silvaco. Various characteristics such as current versus voltage (I-V) plots, luminosity power, band diagram, spectrum response, radiative recombination rate and electric field effect, have been investigated. By controlling the InxGa1−xN(i) number of quantum wells and their indium mole fraction (0.18 or lower), all MQW LED characteristics including radiative recombination rate, needed current, spectral power and emitted light wavelength, are optimized. Increasing (x) value improves radiative recombination rate, spectral power and band gap with lower needed current. Devices with 6 quantum wells and x = 0.16 or 0.18 exhibit best performance. For power saving and environmental purposes, optimal mole ratio is x = 0.16.

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“…The small size of nitrogen compared to arsenic causes tensile strain in the lattice and a large spin-orbit division [ 3 , 4 ]. To explore the potential of this ternary compound, many reports have shown that nitrogen considerably narrows the bandgap energy, shifting the conduction band downwards [ 5 ], and adding 0%–5% nitrogen in GaAs shifts the bandgap energy at a rate of approximately 180 meV per 1% nitrogen [ 6 , 7 , 8 ].…”

Section: Introductionmentioning

confidence: 99%

Bandgap energy modeling of the deformed ternary GaAs1-uNu by artificial neural networks

Tarbi

Chtouki

Elkouari

et al. 2022

Heliyon

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InP/InGaAsP thin films based solar cells: Lattice mismatch impact on efficiency

Cited by 20 publications

References 20 publications

Investigation of the Surface Coating, Humidity Degradation, and Recovery of Perovskite Film Phase for Solar-Cell Applications

Investigation of the Surface Coating, Humidity Degradation, and Recovery of Perovskite Film Phase for Solar-Cell Applications

Optimizing performance and energy consumption in GaN(n)/In x Ga 1- x N/GaN/AlGaN/GaN(p) light emitting diodes by quantum-well number and mole fraction

Bandgap energy modeling of the deformed ternary GaAs1-uNu by artificial neural networks

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