InP-HBT chip-set for 40-Gb/s fiber optical communication systems operational at 3 V

Mokhtari, M.; Swahn, T.; Walden, R.H.; Stanchina, W.E.; Kardos, M.; Juhola, T.; Schuppener, G.; Tenhunen, Hannu; Lewin, T.

doi:10.1109/4.628743

Cited by 41 publications

(3 citation statements)

References 17 publications

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“…An InP-HBT-based, wide-band, high-gain amplifier [5], has been subjected to mounting and packaging in this work. The choice was based on the low number of HF-I/Os and the straightforward function, simplifying analysis of the packaging influence.…”

Section: Interconnect Simulationsmentioning

confidence: 99%

High performance chip to substrate interconnects utilizing embedded structure

Juhola

Keržar

Mokhtari

et al. 2000

IEEE Trans. Adv. Packag.

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Integrated circuit (IC) feature sizes reaching nanoscale range, it is important to bridge the gap between modules and chips with design rules similar to that of IC fabrication technologies. A proper transition calls for improved interconnect design and embedding of IC's to preserve signal integrity. This paper presents a high performance packaging approach for state-of-the-art high frequency IC's (HFIC's). Evaporation-, sputtering-and liftoff procedures were adopted to create smooth, fully planar Au-Cu-Au metallization on low dielectric constant (k) substrates utilizing a dual-mode transmission line in order to decrease microwave losses in carrier interconnects. A special attention was put to investigation of via hole formation.Index Terms-High frequency IC packaging, multichip modules (MCM), package substrate materials, substrate via formation, transmission line design.

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Section: Interconnect Simulationsmentioning

confidence: 99%

High performance chip to substrate interconnects utilizing embedded structure

Juhola

Keržar

Mokhtari

et al. 2000

IEEE Trans. Adv. Packag.

Self Cite

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“…An increase in the capacity of the backbone transmission lines is acutely needed. To this end, development of ultrahighspeed ICs is progressing rapidly and the transmission speed of the ultrahigh-speed optical transmission systems has increased from 10 Gbit/s to 40 Gbit/s [1][2][3]. Devices that can handle such speeds include FETs consisting of compound semiconductors such as GaAs and InP and HBTs (Heterojunction Bipolar Transistors).…”

Section: Introductionmentioning

confidence: 99%

High‐speed self‐aligned SiGe HBT and application to optical‐fiber‐link ICs

Shimamoto¹,

Ohue²,

Oda³

et al. 2002

Electron Comm Jpn Pt II

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SUMMARYSiGe base heterojunction bipolar transistor (HBT) has high-frequency and high-speed performance comparable to compound semiconductor devices, and also has high cost because the existing Si process is used. Hence, this HBT is expected to be a key device for high-speed optical transmission systems and microwave/millimeter-wave wireless systems. The self-aligned SiGe HBT developed here has a PASS structure with selective epitaxial growth by UHV/CVD and buffered polycrystalline Si in the lower layer of the external base polycrystalline Si. In this way, high-speed operation of the intrinsic transistor and reduction of the parasitic capacitance and resistance are realized at the same time. The cutoff frequency and maximum oscillation frequency of this SiGe HBT are 122 and 163 GHz, and the gate delay time of the ECL circuit is an extremely fast 5.5 ps. Further, an IC to form a 40 Gbit/s optical receiver is fabricated. A preamplifier with a 45-GHz bandwidth, a limit amplifier with a gain of 32 dB, a frequency divider of 60-GHz operations, and a 1:4 DEMUX with a decision circuit operating at 40 Gbit/s are realized. It is shown that the 40 Gbit/s optical receiver IC chip set with the present SiGe HBTs reached a practical level.

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“…InP HBT technology is a promising technology to address these needs, due to its excellent frequency characteristics and its built-in threshold voltage uniformity [3]. We present improvements and optimization of our already proven technology.…”

Section: Introductionmentioning

confidence: 99%