Abstract:SUMMARYSiGe base heterojunction bipolar transistor (HBT) has high-frequency and high-speed performance comparable to compound semiconductor devices, and also has high cost because the existing Si process is used. Hence, this HBT is expected to be a key device for high-speed optical transmission systems and microwave/millimeter-wave wireless systems. The self-aligned SiGe HBT developed here has a PASS structure with selective epitaxial growth by UHV/CVD and buffered polycrystalline Si in the lower layer of the … Show more
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