InP based semiconductor structures for radiation detection

Procházková, O.; Grym, Jan; Pekárek, L.; Zavadil, J.; Žďánský, K.

doi:10.1007/s10854-007-9407-1

Cited by 2 publications

(2 citation statements)

References 12 publications

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“…[3,6,7]) we offered recently their theoretical description [8,9]. Here this study is continued with an analysis of the electrical conductivity type inversion that not seldom accompanies the purifying procedure.…”

Section: Introductionmentioning

confidence: 99%

Inversion of conductivity type of III‐V compound layers in experiments with LPE growth from rare‐earth containing melts

Šrobár¹,

Procházková

2009

Cryst. Res. Technol.

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Rare-earth (RE) elements present in the growth melt of the LPE process are known to have a purifying effect on the grown layers of III-V compounds. The RE atoms exhibit high chemical affinity preferentially to shallow donors, forming insoluble aggregates that remain in the melt and do not, ordinarily, enter the solid phase. The aim of the paper is to simulate the situation, sometimes observed experimentally, where the gradual gettering of donor impurity, consequent upon increasing the RE content in the melt, leads to an inversion of the electrical conductivity type of the grown layer from n to p. Usefulness of the approach is demonstrated by interpreting results of an experimental work.

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Section: Introductionmentioning

confidence: 99%

Inversion of conductivity type of III‐V compound layers in experiments with LPE growth from rare‐earth containing melts

Šrobár¹,

Procházková

2009

Cryst. Res. Technol.

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“…In recent years we have pursued the investigation of the influence of the admixture of rare-earth elements and oxides in the growth melt on electrical and luminescence properties of InP epitaxial layers [3][4][5]. It turns out that the admixture of Ce, Pr, Tb, Dy, Yb, Tm, Tm 2 O 3 and Eu and Eu 2 O 3 leads, at certain concentrations, to the reversal of InP conductivity type from n to p. Dy and Pr were found to produce the conductivity conversion at the lowest concentration thus giving the best opportunity to grow thick, pure and structurally perfect layers.…”

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confidence: 99%

Impact of Pr on the properties of InP based layers for light sources and detectors

Procházková

Grym

Zavadil

et al. 2009

Phys. Status Solidi (c)

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We report the optimization of LPE growth technique for the preparation of InP and GaInAsP high quality and high purity layers by using Pr purification effect. We have found that Pr addition into the growth melt leads to the reduction of the layer defect density by a half order of magnitude and carrier concentrations diminished to 1014 cm–3. Three types of p‐n junction based radiation detection structures were prepared and their detection performance was assessed by using α‐particles emitted from the 241Am radioactive source. The type III structure, utilizing the p‐n junction with both components grown with Pr addition, exhibits the highest charge collection efficiency. Pr admixture was also exploited in the preparation of quaternary GaInAsP(Pr) active region in the double heterostructure GaInAsP/InP emitting at 1200 nm. Purification effect of Pr addition is demonstrated by measuring impurity concentrations deduced from C‐V curves and by low temperature PL spectra. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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InP based semiconductor structures for radiation detection

Cited by 2 publications

References 12 publications

Inversion of conductivity type of III‐V compound layers in experiments with LPE growth from rare‐earth containing melts

Inversion of conductivity type of III‐V compound layers in experiments with LPE growth from rare‐earth containing melts

Impact of Pr on the properties of InP based layers for light sources and detectors

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