InP-Based Midinfrared Quantum Cascade Lasers for Wavelengths Below 4 μm

Revin, D. G.; Commin, J. P.; Zhang, S. Y.; Krysa, A. B.; Kennedy, K.; Cockburn, J. W.

doi:10.1109/jstqe.2011.2128858

Cited by 17 publications

(9 citation statements)

References 26 publications

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“…Yet, there are limits to the achievable wavelength range, as shown in Figure . Shorter wavelengths require a higher CBO, which can be achieved using In 0.53 Ga 0.47 As/AlAs 0.56 Sb 0.44 or InAs/AlAs 0.16 Sb 0.84 heterostructures, for wavelengths as low as 2.6 µm . On the long wavelength end of the MIR region, most QCL material systems hit their limit with the onset of the AlAs Reststrahlenband near 25 µm .…”

Section: Introductionmentioning

confidence: 99%

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Evaluation of Material Systems for THz Quantum Cascade Laser Active Regions

Detz

Andrews

Kainz

et al. 2018

Phys. Status Solidi A

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Quantum cascade lasers (QCLs) have been realized in several different material systems. In the mid-infrared, active regions are predominantly based on In 0.53 Ga 0.47 As and InAs as quantum well material. Market-ready devices routinely provide continuous-wave operation at room temperature. For their THz counterparts, the situation is less clear. The most common material system for THz QCLs is the inherently lattice-matched combination of GaAs with Al 0.15 Ga 0.85 As barriers. Yet, these devices still only reach a maximum operating temperature of 200 K with a lack of progress within the past years. Based on the identification of key parameters, this work reviews material systems for quantum cascade lasers with an emphasis on material and growth-related aspects and the goal to identify promising candidates for future device generations. Similar active regions realized in different material systems allow to estimate the gain per unit thickness, as well as total growth times and relative thickness errors.

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Section: Introductionmentioning

confidence: 99%

“…Shortest and longest MIR QCL wavelengths for different CBO . Lasing within the AlAs Reststrahlenband is enabled by the Al‐free combination of In 0.53 Ga 0.47 As quantum wells and GaAs 0.51 Sb 0.49 barriers.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Material Systems for THz Quantum Cascade Laser Active Regions

Detz

Andrews

Kainz

et al. 2018

Phys. Status Solidi A

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“…QCLs have the large number of applications in high−resolution molecular spectroscopy, industrial control, medical diagnostics, military and law enforcement and free− −space telecommunications. Since the first demonstration in 1994 [1], they have undergone many improvements to achieve higher continuous−wave powers, better temperature stability and lower threshold currents [2,3].…”

Section: Introductionmentioning

confidence: 99%

LP-MOVPE growth and properties of high Si-doped InGaAs contact layer for quantum cascade laser applications

Ściana

Badura

Dawidowski

et al. 2016

Opto-Electronics Review

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The work presents doping characteristics and properties of high Si−doped InGaAs epilayers lattice−matched to The electron concentration increases linearly with the ratio of gas−phase molar fraction of the dopant to III group sources (IV/III). The highest electron concentrations suitable for InGaAs plasmon−contact lay− ers of QCL was achieved only for disilane. We also observed a slight influence of the ratio of gas−phase molar fraction of V to III group sources (V/III) on the doping efficiency. Structural measurements using high−resolution X−ray diffraction revealed a dis− tinct influence of the doping concentration on InGaAs composition what caused a lattice mismatch in the range of -240¸-780 ppm for the samples doped by silane and disilane. It has to be taken into account during the growth of InGaAs contact layers to avoid internal stresses in QCL epitaxial structures.

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Section: Introductionmentioning

confidence: 99%

“…GaSb‐based, 3.0–3.5 μm emitting quantum cascade lasers (QCLs) [10] suffer from short lifetimes because of strong electron confinement in active QWs of high conduction‐band offset, which, in turn, leads to high threshold currents and subsequent high electronic temperatures [11] and low (i.e. 100–116 K) T 0 values [10, 12]. Furthermore, they have relatively high thermal resistances because of poor AlGaSb/InGaAs interfaces [13], which explain why only low‐duty‐cycle (2%) operation has been reported to date [10].…”

Section: Introductionmentioning

confidence: 99%