In addition to the nucleophile and solvent, the leaving group has a significant influence on SN2 nucleophilic substitution reactions. Its role is frequently discussed with respect to reactivity, but its influence on the reaction dynamics remains unclear. Here, we uncover the influence of the leaving group on the gas-phase dynamics of SN2 reactions in a combined approach of crossed-beam imaging and dynamics simulations. We have studied the reaction F(-) + CH3Cl and compared it to F(-) + CH3I. For the two leaving groups, Cl and I, we find very similar structures and energetics, but the dynamics show qualitatively different features. Simple scaling of the leaving group mass does not explain these differences. Instead, the relevant impact parameters for the reaction mechanisms are found to be crucial and the differences are attributed to the relative orientation of the approaching reactants. This effect occurs on short timescales and may also prevail in solution-phase conditions.

The proton transfer reaction H3+ + CO is one of the cornerstone chemical processes in the interstellar medium. Here, the dynamics of this reaction have been investigated using crossed beam velocity map imaging. Formyl product cations are found to be predominantly scattered into the forward direction irrespective of the collision energy. In this process, a high amount of energy is transferred to internal product excitation. By fitting a sum of two distribution functions to the measured internal energy distributions, the product isomer ratio is extracted. A small HOC+ fraction is obtained at a collision energy of 1.8 eV, characterized by an upper limit of 24% with a confidence level of 84%. At lower collision energies, the data indicate purely HCO+ formation. Such low values are unexpected given the previously predicted efficient formation of both HCO+ and HOC+ isomers for thermal conditions. This is discussed in light of the direct reaction dynamics that are observed.

We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAs0.16Sb0.84 heterostructures. Due to the lower effective electron mass, InAs based active regions are expected to provide a higher optical gain compared to structures consisting of GaAs or InGaAs. The growth by molecular beam epitaxy enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well resonant phonon depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applying a magnetic field perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of InAs based active regions for terahertz quantum cascade lasers, potentially enabling higher operating temperatures.