InN Nanowires

Zhao, Songrui; Mi, Zetian

doi:10.1016/bs.semsem.2016.08.001

Cited by 7 publications

(6 citation statements)

References 173 publications

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“…Particularly, the nanowire growth on various substrates is a subject worthy of further investigation, which is also critical to improve the device performances on these unconventional substrates. For more detailed growth control over the density, doping, morphology and material quality of such nanowires, readers may refer to the earlier review and book chapters …”

Section: Iii‐nitride Nanowire Photonic Devices Fabricated Directly Onmentioning

confidence: 99%

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Recent Advances on III‐Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics

Sun

2018

Physica Status Solidi (a)

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Flexible electronic and photonic devices have received broad interest in the past, due to their compact size, new functionalities, and other merits which devices on rigid substrates do not possess. In this context, the author review recent progresses on flexible III-nitride nanowire photonic devices, focusing on LEDs and lasers. The formation of III-nitride nanowire LEDs and lasers directly on various foreign substrates is firstly described, paving the way to flexible IIInitride nanowire photonic devices through either direct growth on or transfer to flexible substrates. The realization of flexible III-nitride nanowire LEDs through various transfer processes is further detailed. In the end, the challenges of IIInitride nanowire technology for flexible integrated photonics are discussed.

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Section: Iii‐nitride Nanowire Photonic Devices Fabricated Directly Onmentioning

confidence: 99%

“…These growth for III‐nitride nanowires can be found in recent review articles . In this paper, we focus on photonic devices, in particular LEDs and lasers.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances on III‐Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics

Sun

2018

Physica Status Solidi (a)

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“…However, the growth of high-quality InN layers is hampered by the high lattice mismatch with usual substrates [2], [7], [8], [9], [10], [11] . In an effort to circumvent this limitation, the 1D geometry of nanowires is used [12] . The small footprint on the substrate surface allows to improve the crystal quality and reduce the dislocation density through the effective stress relaxation [13] .…”

Section: Introductionmentioning

confidence: 99%

“…The SAG was performed on SiN masked Ga-polar GaN/c-Al2O3 templates with circular openings of 200 nm. It resulted in perfectly hexagonal InN nanorods delimited with (1-100) m-planes, (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) a-planes and the top (0001) c-plane. However, it was reported that the optical and electrical properties of 1D nitride structures may heavily depend on their shape [23] .…”

Section: Introductionmentioning

confidence: 99%

Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

Zeghouane

Avit

André

et al. 2020

Crystal Growth & Design

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The control of the morphology of InN nanorods, which remains challenging due to complex mechanisms involved in the growth process, is essential for the next generation of nano-and optoelectronic devices. In this paper, we report on the Selective Area Growth (SAG) of InN nanorods on Ga-polar GaN/c-Al2O3 template using Hydride Vapor Phase Epitaxy (HVPE). A systematic study of the evolution of the shape of InN nanorods under various growth conditions: growth temperature, growth time and the input NH3 partial pressure, is carried out. The optimal growth temperature to achieve a perfect selectivity and prevent InN decomposition is first determined. The axial and radial growth rates dependence on the growth temperature and vapor phase composition with group V elements is discussed. The influence of mass transport on the InN nanorods geometry is shown to be more pronounced at extended growth time. The swapping of the nanorods morphology from pencil to a perfect hexagonal shape is controlled by varying the growth time. Photoluminescence measurements on InN nanorods are interpreted by considering a concentration of free electrons. The results reported herein provide relevant information for understanding SAG of InN, and could pave the way to develop high performance InN nanorods based devices.

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“…An overview of recent advances on the growth and characterization of III-nitride nanowire structures can be found in Refs. [16,36,40]. Compared to epilayers, nanowire structures have a number of advantages and could provide a solution to the p-type doping challenge.…”

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confidence: 99%

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Zhao

2017

Crystals

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p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE)-grown p-type InN and AlN-two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV) optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

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InN Nanowires

Cited by 7 publications

References 173 publications

Recent Advances on III‐Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics

Recent Advances on III‐Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics

Morphological Control of InN Nanorods by Selective Area Growth–Hydride Vapor-Phase Epitaxy

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

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