Recent Advances on III‐Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics

Sun, Haiding

doi:10.1002/pssa.201800420

Cited by 33 publications

(24 citation statements)

References 116 publications

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“…Despite the progress made for devices on Si substrate, the limitations of using Si substrate are also obvious, e.g., the strong light absorption in the UV spectral range, the spontaneously formed SiN x that might be a barrier for the electrical charge transport [90]. This motivates the studies of AlGaN nanowire UV LEDs on other foreign substrates, including metal and graphene.…”

Section: Algan Nanowire Uv Leds On Other Foreign Substratesmentioning

confidence: 99%

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.

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Section: Algan Nanowire Uv Leds On Other Foreign Substratesmentioning

confidence: 99%

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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“…The developed techniques largely aim to produce structures with precisely controlled dimensions and chemical composition which are crucial for the development of novel flexible devices (e.g. FETs [ 79 , 80 ], light-emitting diodes [ 81 ], thermoelectric [ 82 ] and piezoelectric nanogenerators [ 83 – 85 ] etc.). The combination of bottom-up or top-down strategy and the experimental technique are decided based upon the material used and the application requirement.…”

Section: Printable Inorganic Nano To Macro Scale Structures: Fabricatmentioning

confidence: 99%

High-performance printed electronics based on inorganic semiconducting nano to chip scale structures

et al. 2020

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The Printed Electronics (PE) is expected to revolutionise the way electronics will be manufactured in the future. Building on the achievements of the traditional printing industry, and the recent advances in flexible electronics and digital technologies, PE may even substitute the conventional silicon-based electronics if the performance of printed devices and circuits can be at par with silicon-based devices. In this regard, the inorganic semiconducting materials-based approaches have opened new avenues as printed nano (e.g. nanowires (NWs), nanoribbons (NRs) etc.), micro (e.g. microwires (MWs)) and chip (e.g. ultra-thin chips (UTCs)) scale structures from these materials have been shown to have performances at par with silicon-based electronics. This paper reviews the developments related to inorganic semiconducting materials based high-performance large area PE, particularly using the two routes i.e. Contact Printing (CP) and Transfer Printing (TP). The detailed survey of these technologies for large area PE onto various unconventional substrates (e.g. plastic, paper etc.) is presented along with some examples of electronic devices and circuit developed with printed NWs, NRs and UTCs. Finally, we discuss the opportunities offered by PE, and the technical challenges and viable solutions for the integration of inorganic functional materials into large areas, 3D layouts for high throughput, and industrial-scale manufacturing using printing technologies.

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“…The fabrication of flexible devices from conventional thin-film structures requires additional processing steps to lift-off and microstructure the active layer. To simplify the process, alternative fabrication routes were actively explored based on nanomaterials such as bottom-up nanowires (NWs) [4][5][6][7][8][9][10][11][12][13]. NWs not only have remarkable optoelectronic properties, but they can also withstand high deformations without plastic relaxation [14,15].…”

Section: Introductionmentioning

confidence: 99%

“…NWs not only have remarkable optoelectronic properties, but they can also withstand high deformations without plastic relaxation [14,15]. These properties motivated the intense research of NW flexible LEDs [4,[8][9][10][11][12][13]16]. In most realizations, NWs are embedded in a transparent polymer (e.g., polydimethylsiloxane (PDMS), polyimide, SU-8, or parylene [12,[17][18][19][20][21]), which acts as a supporting material to form the active membrane.…”

Section: Introductionmentioning

confidence: 99%

Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes

et al. 2020

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We analyze the thermal behavior of a flexible nanowire (NW) light-emitting diode (LED) operated under different injection conditions. The LED is based on metal–organic vapor-phase deposition (MOCVD)-grown self-assembled InGaN/GaN NWs in a polydimethylsiloxane (PDMS) matrix. Despite the poor thermal conductivity of the polymer, active nitride NWs effectively dissipate heat to the substrate. Therefore, the flexible LED mounted on a copper heat sink can operate under high injection without significant overheating, while the device mounted on a plastic holder showed a 25% higher temperature for the same injected current. The efficiency of the heat dissipation by nitride NWs was further confirmed with finite-element modeling of the temperature distribution in a NW/polymer composite membrane.

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Recent Advances on III‐Nitride Nanowire Light Emitters on Foreign Substrates – Toward Flexible Photonics

Cited by 33 publications

References 116 publications

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

High-performance printed electronics based on inorganic semiconducting nano to chip scale structures

Heat Dissipation in Flexible Nitride Nanowire Light-Emitting Diodes

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