Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Zhao, Songrui; Mi, Zetian

doi:10.3390/cryst7090268

Cited by 34 publications

(25 citation statements)

References 106 publications

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“…It is noted, though, tunnel junctions involving large bandgap thin films have remained challenging to realize. The success of having the GaN-based nanowire tunnel junction is due to the enhanced dopant incorporation in nanowire structures [23,25,26,71,72].…”

Section: Algan Nanowire Uv Leds On Simentioning

confidence: 99%

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.

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Section: Algan Nanowire Uv Leds On Simentioning

confidence: 99%

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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“…[23,30,76,87,90,[92][93][94][95] To date, there has been only one demonstration of electrically pumped AlGaN quantum well lasers operating in the UV-B and UV-C bands. [26,91,[96][97][98][99][100] With the use of AlGaN nanocrystals electrically pumped mid and deep UV laser diodes has been successfully demonstrated, as shown in Figure 9d. [26,[96][97][98]…”

Section: Aln and Algan Uv Leds And Laser Diodesmentioning

confidence: 99%

Section: Photocatalytic and Photoelectrochemical Solar Water Splittingmentioning

confidence: 99%

Emerging Applications of III‐Nitride Nanocrystals

Liu

Chowdhury

Vanka

et al. 2020

Physica Status Solidi (a)

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Recently, significant progress has been made in III-nitride nanocrystals. They exhibit unique structural, electronic, optical, and photocatalytic properties, and have emerged as a functional platform to realize high-performance optoelectronic, electronic, quantum, and solar energy devices. Compared with conventional III-nitride epilayers and quantum wells, dislocation-free III-nitride nanocrystals can, in principle, be achieved on lattice mismatched foreign substrates due to the efficient surface strain relaxation. In this Feature Article, the authors discuss the epitaxy, characteristics, and some emerging device applications of III-nitride nanocrystals grown by plasma-assisted molecular beam epitaxy.

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“…[58,59] However, due to the large hole effective masses for both GaN and AlN, even the activation energy of Mg in AlGaN alloys is high, and is typically on the order of several hundred meV. [48,60,61] This large Mg activation energy is one major reason limiting hole concentrations in p-type AlGaN. In addition, the co-doping effect also limits the maximum available Mg for free holes.…”

Section: Introductionmentioning

confidence: 99%

“…The lasing spectra of AlGaN nanowire lasers at different lasing wavelengths under the electrical injection. Reproduced under the terms of the CC-BY Creative Commons Attribution 4.0 International license (https://creativecommons.org/licenses/by/4.0) [61]. Copyright 2017, The Authors, published by MDPI.…”

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confidence: 99%

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

Zhang

Yin

Zhao

2021

Physica Rapid Research Ltrs

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Over the past decades, the aluminum gallium nitride (AlGaN) alloy system has received wide interest for the development of semiconductor deep ultraviolet (DUV) lasers due to its direct, tunable, and ultrawide bandgap energies (3.4-6.2 eV). The progress, nonetheless, has been remained slow, which is ascribed to a few major challenges, including large dislocation and defect densities, difficulty in obtaining p-type high-Al-content AlGaN layers with a sufficient p-type conduction, the large electric polarization fields, and the unfavorable optical polarization. In recent years, with AlGaN alloys grown by molecular beam epitaxy (MBE), including both thin films and nanowire structures, remarkable advancements have been made, such as highly conductive p-type high-Al-content AlGaN epilayers with resistivities as low as 0.7 Ω cm and DUV lasing down to 239 nm with nanowire structures under a direct current injection. Herein, the recent progress on the DUV lasers by the MBE-grown AlGaN is reviewed. The challenges and prospects of the MBE-grown AlGaN for DUV lasers are also discussed.

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Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

Cited by 34 publications

References 106 publications

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Emerging Applications of III‐Nitride Nanocrystals

Recent Progress on Aluminum Gallium Nitride Deep Ultraviolet Lasers by Molecular Beam Epitaxy

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