2010 35th IEEE Photovoltaic Specialists Conference 2010
DOI: 10.1109/pvsc.2010.5614481
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Inkjet structured EWT silicon solar cells with evaporated aluminum metallization and laser-fired contacts

Abstract: This work focuses on manufacturing inkjet structured Emitter Wrap-Through (EWT) silicon solar cells with a side selective emitter and an evaporated metallization. Inkjet structuring is a suitable technique for the formation of interdigitated structures used in back contacted silicon solar cells because it allows small feature sizes and has high alignment accuracy. Therefore all structuring steps in this EWT solar cell process are done with the help of inkjet masking. This includes the structuring of a silicon … Show more

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Cited by 5 publications
(2 citation statements)
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“…Another possibility is to use a doped silicon oxide layer as a diffusion source as shown in [13]. Such a layer can be used, as already demonstrated earlier in [14][15][16], in a co-diffusion process or to replace phosphorus oxychloride (POCl 3 ) as in [17]. Doped silicon nitride layers may also be used as a replacement for POCl 3 as shown in [18].…”
Section: Introductionmentioning
confidence: 99%
“…Another possibility is to use a doped silicon oxide layer as a diffusion source as shown in [13]. Such a layer can be used, as already demonstrated earlier in [14][15][16], in a co-diffusion process or to replace phosphorus oxychloride (POCl 3 ) as in [17]. Doped silicon nitride layers may also be used as a replacement for POCl 3 as shown in [18].…”
Section: Introductionmentioning
confidence: 99%
“…Fallisch et al [11]. As for the BSG deposition the silane gas flow during doped glass deposition is a suitable parameter to adjust the sheet resistance.…”
Section: Phosphorus Diffusion Phosphorus Diffusion From Pecvd Depositmentioning
confidence: 99%