Co‐diffusion from solid sources for bifacial n‐type solar cells

Rothhardt, Philip; Keding, Roman; Aßmus, W.; Biro, Daniel

doi:10.1002/pssr.201308055

Cited by 13 publications

(4 citation statements)

References 11 publications

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“…This demonstrates the possibility for a significant simplification of the fabrication process for n‐HIP‐MWT+ solar cells by integrating a laser structuring process for the phosphorus‐doped BSF. This approach is also compatible with other approaches to form the highly doped surfaces, as e.g., co‐diffusion or implantation. On the other hand, also the observed loss in η = −0.3% abs for the n‐HIP‐MWT cell structure remains within reasonable bounds.…”

Section: Resultsmentioning

confidence: 85%

20% efficient n‐type Cz‐Si MWT solar cells with adjustable reverse behavior

Lohmüller

Werner

Maus

et al. 2016

Physica Status Solidi (a)

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We present 6-inch n-type Cz-Si metal wrap through (MWT) solar cells with screen-printed and fired contacts achieving energy conversion efficiencies up to 20.4%. These so-called n-type high-performance MWT (n-HIP-MWT) structures feature different rear side configurations at the external p-type contacts with respect to the phosphorus-doped back surface field (BSF). It is shown that the alteration of the phosphorus dopant concentration at the silicon surface below the external rear p-type contacts allows for both decreasing reverse-bias-induced losses and adjusting the current flowing in reverse mode

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Section: Resultsmentioning

confidence: 85%

20% efficient n‐type Cz‐Si MWT solar cells with adjustable reverse behavior

Lohmüller

Werner

Maus

et al. 2016

Physica Status Solidi (a)

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“…There have been many studies on co-diffusion of boron and phosphorus to resolve the many steps of boron diffusion. Rothhardt et al studied co-diffusion from BSG and phosphorus doped glass, (PSG), deposited by plasma enhanced chemical vapor deposition (PECVD), and Meier et al used BSG deposited by atmospheric pressure chemical vapor deposition (APCVD) and POCl 3 gas ambient as a doping source [12][13][14]. These methods reduced diffusion steps compared with conventional boron diffusion using BBr 3 gas, but they are still complicated methods due to BSG deposition.…”

Section: Introductionmentioning

confidence: 99%

Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells

Choi¹,

Lee²,

Jung³

et al. 2018

J. Phys. D: Appl. Phys.

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This paper reports the fabrication of crystalline silicon passivated emitter rear totally diffused (c-Si PERT) solar cells with ultra-thin p-type wafers 50 µm in thickness. Co-diffusion of boron and phosphorus in a single rapid thermal processing cycle, and an Al spin-on glass post-curing process were developed to remove the boron rich layer which is detrimental to c-Si solar cells. Co-diffusion was carried out with spin-on diffusion sources using boric acid and a P spin on dopant for simple and cost-effective emitter and back surface field (BSF) formation processes. The fabricated ultra-thin c-Si PERT cell featured an open circuit voltage (Voc) of 0.575 V, a short circuit current density (Jsc) of 35.8 mA cm−2, a fill factor of 0.725, and a power conversion efficiency of 15.0%. The efficiency has improved by 2% compared with the standard structure cell with Al-BSF using thin evaporated Al 2 µm in thickness. Along with cell output parameters, the flexural strength and critical bending radius were measured by a four point bending test, and the results showed that the solar cells with thinner rear Al electrodes are more applicable for a flexible solar cell device.

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“…Recent research has focused on the formation process of PECVD silicate glass emitters , monitoring the quality of these PECVD emitters , co‐diffusion processes with PECVD emitters , contacting of these emitters , passivation through the same BSG layer , and the fabrication of solar cells using PECVD silicate glass . Solar cell efficiencies of above 20% have been achieved with PECVD silicate glass processes for n‐type small area back junction IBC cell concepts , large area back junction , and front junction bifacial solar cell concepts .…”

Section: Introductionmentioning

confidence: 99%

A 3‐in‐1 doping process for interdigitated back contact solar cells exploiting the understanding of co‐diffused dopant profiles by use of PECVD borosilicate glass in a phosphorus diffusion

Gloger

Herguth

Engelhardt

et al. 2016

Progress in Photovoltaics

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Boron and phosphorus doping of crystalline silicon using a borosilicate glass (BSG) layer from plasma enhanced chemical vapor deposition (PECVD) and phosphorus oxychloride diffusion, respectively, is investigated. More specifically, the si multaneous and interacting diffusion of both elements through the BSG layer into the silicon substrate is characterized in depth. We show that an overlying BSG layer does not prevent the formation of a phosphorus emitter in silicon substrates during phosphorus diffusion. In fact, a BSG layer can even enhance the uptake of phosphorus into a silicon substrate com pared with a bare substrate.From the understanding of the joint diffusion of boron and phosphorus through a BSG layer into a silicon substrate, a model is developed to illustrate the correlation of the concentration dependent diffusivities and the emerging diffusion pro files of boron and phosphorus. Here, the in diffusion of the dopants during diverse doping processes is reproduced by the use of known concentration dependences of the diffusivities in an integrated model. The simulated processes include a BSG drive in step in an inert and in a phosphorus containing atmosphere.Based on these findings, a PECVD BSG/capping layer structure is developed, which forms three different n ++ , n + and p + doped regions during one single high temperature process. Such engineered structure can be used to produce back contact solar cells.

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Co‐diffusion from solid sources for bifacial n‐type solar cells

Cited by 13 publications

References 11 publications

20% efficient n‐type Cz‐Si MWT solar cells with adjustable reverse behavior

20% efficient n‐type Cz‐Si MWT solar cells with adjustable reverse behavior

Co-diffusion of boron and phosphorus for ultra-thin crystalline silicon solar cells

A 3‐in‐1 doping process for interdigitated back contact solar cells exploiting the understanding of co‐diffused dopant profiles by use of PECVD borosilicate glass in a phosphorus diffusion

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