Doping layers commonly have but one function: supplying the dopants to form a doped region within a substrate. This work presents B doping layers/stacks, which at the same time supply dopant atoms, passivate the B-doped crystalline Si surface sufficiently well (j 0E < 50 fA/cm 2 ), and show optical properties suitable for anti-reflective coating. Furthermore, these boron silicate glasses can act as a barrier against parasitic P in-diffusion during a co-diffusion step. The boron emitters diffused from the inductively coupled plasma plasma-enhanced chemical vapor-deposited B containing SiO x layers are investigated and optimized concerning passivation quality and contact properties for high-efficiency n-type solar Si cell designs. It is shown that even 10 nm thin SiO x :B films already allow for suitable emitter sheet resistance for screen-printed contacts. Furthermore, SiO x :B layers presented here allow for iV OC values of 675 mV and contact resistivity of 1 mXcm 2 for commercial Ag instead of Ag/Al pastes on the diffused boron emitter passivated with the SiO x :B layer supporting the contact formation. All of these properties can be achieved within one single B doping layer/stack. V C 2015 AIP Publishing LLC. [http://dx
Boron and phosphorus doping of crystalline silicon using a borosilicate glass (BSG) layer from plasma enhanced chemical vapor deposition (PECVD) and phosphorus oxychloride diffusion, respectively, is investigated. More specifically, the si multaneous and interacting diffusion of both elements through the BSG layer into the silicon substrate is characterized in depth. We show that an overlying BSG layer does not prevent the formation of a phosphorus emitter in silicon substrates during phosphorus diffusion. In fact, a BSG layer can even enhance the uptake of phosphorus into a silicon substrate com pared with a bare substrate.From the understanding of the joint diffusion of boron and phosphorus through a BSG layer into a silicon substrate, a model is developed to illustrate the correlation of the concentration dependent diffusivities and the emerging diffusion pro files of boron and phosphorus. Here, the in diffusion of the dopants during diverse doping processes is reproduced by the use of known concentration dependences of the diffusivities in an integrated model. The simulated processes include a BSG drive in step in an inert and in a phosphorus containing atmosphere.Based on these findings, a PECVD BSG/capping layer structure is developed, which forms three different n ++ , n + and p + doped regions during one single high temperature process. Such engineered structure can be used to produce back contact solar cells.
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