Boron Emitters from Doped PECVD Layers for n-type Crystalline Silicon Solar Cells with LCO

Engelhardt, Josh; Frey, Alexander; Mahlstaedt, Lisa; Gloger, Sebastian; Hahn, Giso; Terheiden, Barbara

doi:10.1016/j.egypro.2014.08.050

Cited by 18 publications

(18 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These layers have doping as well as barrier properties. 6,[8][9][10] CVD as well as gas-phase grown doping layers as diffusion source have not been commonly used as passivation layers, and CVD SiO x doping layers have not yet been reported to reach the high level of passivation and optical transmission necessary for good cell performance directly after the diffusion process without further treatment. In addition, related investigations on passivation of B containing SiO x layers did not show sufficiently low j 0E values for B emitters (depending on sheet resistance) up to now.…”

mentioning

confidence: 99%

“…Aside from commonly used gasphase diffusions using BBr 3 2,3 or BCl 3 4 sources, chemical vapor deposited (CVD) doping layers can be used to form the necessary diffusion source. [5][6][7][8][9][10] Using plasma-enhanced chemical vapor deposited (PECVD) doping layers [5][6][7][8][9][10] reduces the number of solar cell process steps compared to gas phase based processes and increases the flexibility of future industrial process flows for advanced cell designs such as n-type passivated emitter rear totally diffused (PERT) or interdigitated back contact (IBC) solar cells. 10 Furthermore, PECVD doping layers allow for a larger parameter range of doping profiles because of the separation of doping source deposition and drive-in step.…”

mentioning

confidence: 99%

See 1 more Smart Citation

Passivating boron silicate glasses for co-diffused high-efficiency n-type silicon solar cell application

Engelhardt

Frey

Gloger

et al. 2015

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

Doping layers commonly have but one function: supplying the dopants to form a doped region within a substrate. This work presents B doping layers/stacks, which at the same time supply dopant atoms, passivate the B-doped crystalline Si surface sufficiently well (j 0E < 50 fA/cm 2 ), and show optical properties suitable for anti-reflective coating. Furthermore, these boron silicate glasses can act as a barrier against parasitic P in-diffusion during a co-diffusion step. The boron emitters diffused from the inductively coupled plasma plasma-enhanced chemical vapor-deposited B containing SiO x layers are investigated and optimized concerning passivation quality and contact properties for high-efficiency n-type solar Si cell designs. It is shown that even 10 nm thin SiO x :B films already allow for suitable emitter sheet resistance for screen-printed contacts. Furthermore, SiO x :B layers presented here allow for iV OC values of 675 mV and contact resistivity of 1 mXcm 2 for commercial Ag instead of Ag/Al pastes on the diffused boron emitter passivated with the SiO x :B layer supporting the contact formation. All of these properties can be achieved within one single B doping layer/stack. V C 2015 AIP Publishing LLC. [http://dx

show abstract

mentioning

confidence: 99%

mentioning

confidence: 99%

Passivating boron silicate glasses for co-diffused high-efficiency n-type silicon solar cell application

Engelhardt

Frey

Gloger

et al. 2015

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…[68,69] During PECVD, electrons rapidly gain energy through a radio frequency (RF) field and, combined with a reagent gas (e.g. PH 3 ), they form highly reactive chemical species that produce the desired layer, already at a temperature of 300 °C.…”

Section: Chemical Vapor Depositionmentioning

confidence: 99%

“…Yet, the measurement can still provide useful information, especially when comparing different doping settings of the same technique, as the sheet resistance will decrease with increasing surface concentration. [63,68] Similar to ball grooving and staining, the combination of …”

Section: Flat Surfacesmentioning

confidence: 99%

See 1 more Smart Citation

Fabrication and doping of silicon micropillar arrays for solar light harvesting

Elbersen¹

View full text Add to dashboard Cite

Fabrication and Doping Methods for Silicon Nano‐ and Micropillar Arrays for Solar‐Cell Applications: A Review

et al. 2015

View full text Add to dashboard Cite

Silicon is one of the main components of commercial solar cells and is used in many other solar-light-harvesting devices. The overall efficiency of these devices can be increased by the use of structured surfaces that contain nanometer- to micrometer-sized pillars with radial p/n junctions. High densities of such structures greatly enhance the light-absorbing properties of the device, whereas the 3D p/n junction geometry shortens the diffusion length of minority carriers and diminishes recombination. Due to the vast silicon nano- and microfabrication toolbox that exists nowadays, many versatile methods for the preparation of such highly structured samples are available. Furthermore, the formation of p/n junctions on structured surfaces is possible by a variety of doping techniques, in large part transferred from microelectronic circuit technology. The right choice of doping method, to achieve good control of junction depth and doping level, can contribute to an improvement of the overall efficiency that can be obtained in devices for energy applications. A review of the state-of-the-art of the fabrication and doping of silicon micro and nanopillars is presented here, as well as of the analysis of the properties and geometry of thus-formed 3D-structured p/n junctions.

show abstract

Boron Emitters from Doped PECVD Layers for n-type Crystalline Silicon Solar Cells with LCO

Cited by 18 publications

References 6 publications

Passivating boron silicate glasses for co-diffused high-efficiency n-type silicon solar cell application

Passivating boron silicate glasses for co-diffused high-efficiency n-type silicon solar cell application

Fabrication and doping of silicon micropillar arrays for solar light harvesting

Fabrication and Doping Methods for Silicon Nano‐ and Micropillar Arrays for Solar‐Cell Applications: A Review

Contact Info

Product

Resources

About