Injection control technique for high speed switching with a double gate PNM-IGBT

Sumitomo, M.; Sakane, Hiroyuki; Arakawa, Kazuki; Higuchi, Yasushi; Matsui, Masaki

doi:10.1109/ispsd.2013.6694392

Cited by 45 publications

(20 citation statements)

References 3 publications

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“…They are well known as a transparent collector and an injection enhancement effect for latest IGBT structure [8,9]. Furthermore, prior extraction of hole before turn-off was proposed as further improvement [11]. Y is about twenty times higher than X on the envelope curve of f min in Fig.…”

Section: Igbtsmentioning

confidence: 99%

“…We also calculate f i 1 , f i 2 , f j , and f from (40) in the same manner as (11). Figures 9 and 10 are results of (40) for the same sets of X and Y in the former section.…”

Section: Igbts Turn-off Energy Of Igbt Is Denoted By (21)mentioning

confidence: 99%

“…The recombination effect is represented by the indefinite integral part of (11). As we have explained in Section 3.1, E rr close to E s with a decrease of F ; therefore, we evaluate recombination effect at F = F as the reference.…”

Section: Pin Diodesmentioning

confidence: 99%

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An Analytical Evaluation of Performance Limit for PiN diodes and IGBTs

Terashima

2021

IEEJ Transactions Elec Engng

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This paper reports analytical evaluation for minimum reverse recovery loss and turn-off loss of PiN diodes and IGBTs, respectively. In this evaluation, we take account of structural parameters and current continuity at the both ends of the i-layer, and we calculate switching losses (E) from energy dissipation on the i-layer during switching action by using position integration instead of time integration. In the case of IGBT, we assume that depletion layer spreads from the i-layer and n + layer interface of the PiN diode that corresponds to bottom p type layer-n − layer-p type backgate region of IGBT cells. We evaluate optimum structure for minimum energy dissipation of these switching actions and conduction states by newly employed index RE consists of R calculated by voltage drop at the i-layer and both ends of the i-layer and E. We clarify that ideal carrier profile for minimum RE , and we also evaluate structural parameters for that condition.

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Section: Igbtsmentioning

confidence: 99%

“…We also calculate f i 1 , f i 2 , f j , and f from (40) in the same manner as (11). Figures 9 and 10 are results of (40) for the same sets of X and Y in the former section.…”

Section: Igbts Turn-off Energy Of Igbt Is Denoted By (21)mentioning

confidence: 99%

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An Analytical Evaluation of Performance Limit for PiN diodes and IGBTs

Terashima

2021

IEEJ Transactions Elec Engng

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“…It is quite natural that an extremely fine cell pitch, which is currently referred to as 'narrow mesa' type structure [25][26][27], has an advantage on better V CEsat . At the same time, the narrow mesa structure has a disadvantage on worse E off and/or SCSOA without some special gate assistance [28] otherwise a wider cell pitch and a special cell geometry [29,30]. It means that these structures also face the triangular trade-off between V on versus E off versus SCSOA.…”

Section: Improving Fundamental Trade-offmentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.

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“…Various approaches based on advanced gate-control schemes have been suggested, partly with specifically designed and optimised IGBTs. Examples are two-level [15] or multi-level turnoff of IGBTs, IGBTs with a second gate which enables hole extraction just before the main switching gate turns off the entire device [16][17][18], or reverse conducting IGBTs, where a desaturation pulse applied to the IGBT operating in diode mode just before the commutation is used to reduce the plasma density [19][20][21][22][23]. Furthermore, hybrid switches consisting of parallel-connected Si-IGBTs and SiC-metal oxide semiconductor field effect transistors (MOSFETs) are considered to be beneficial for certain applications.…”

Section: Advanced Gate-control Conceptsmentioning

confidence: 99%

Progress in IGBT development

Niedernostheide

Schulze

Laska

et al. 2018

IET Power Electronics

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Recent progress in insulated gate bipolar transistor (IGBT) development is reviewed. Highlighted issues range from technological aspects such as special processes suitable for thin-wafer-processing, through the advanced cell and vertical concepts to approaches for improved IGBT ruggedness. Latest advancements regarding thermal management in both modules and discrete chips are also addressed. (a) Turn-off transients of a 15 A-1200 V-IGBT with an FS layer created by a threestage proton implantation (T = 125°C), (b) Maximum DC-link voltage V DC,max at which the IGBT can be turned off softly

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Injection control technique for high speed switching with a double gate PNM-IGBT

Cited by 45 publications

References 3 publications

An Analytical Evaluation of Performance Limit for PiN diodes and IGBTs

An Analytical Evaluation of Performance Limit for PiN diodes and IGBTs

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Progress in IGBT development

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