An Analytical Evaluation of Performance Limit for PiN diodes and IGBTs

Abstract

This paper reports analytical evaluation for minimum reverse recovery loss and turn-off loss of PiN diodes and IGBTs, respectively. In this evaluation, we take account of structural parameters and current continuity at the both ends of the i-layer, and we calculate switching losses (E) from energy dissipation on the i-layer during switching action by using position integration instead of time integration. In the case of IGBT, we assume that depletion layer spreads from the i-layer and n + layer interface of the PiN diode that corresponds to bottom p type layer-n − layer-p type backgate region of IGBT cells. We evaluate optimum structure for minimum energy dissipation of these switching actions and conduction states by newly employed index RE consists of R calculated by voltage drop at the i-layer and both ends of the i-layer and E. We clarify that ideal carrier profile for minimum RE , and we also evaluate structural parameters for that condition.