Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO&lt;sub&gt;2&lt;/sub&gt;&lt;sub&gt; &lt;/sub&gt;Using Ti(OCH&lt;sub&gt;3&lt;/sub&gt;)&lt;sub&gt;4&lt;/sub&gt; and H&lt;sub&gt;2&lt;/sub&gt;O as Precursors

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cov er the lat est tr ends in t he research f ield, both the var iously constr ucted TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

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Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO<sub>2</sub><sub> </sub>Using Ti(OCH<sub>3</sub>)<sub>4</sub> and H<sub>2</sub>O as Precursors

Cited by 2 publications

References 31 publications

Kinetic Study of Tetrakis(Dimethylamido)Titanium and Titanium Tetrachloride Adsorption on a Silicon Surface in Atomic Layer Deposition: A DFT Calculation

Kinetic Study of Tetrakis(Dimethylamido)Titanium and Titanium Tetrachloride Adsorption on a Silicon Surface in Atomic Layer Deposition: A DFT Calculation

Titanium dioxide thin films by atomic layer deposition: a review

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