Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy

Self Cite

SiC/Si(111) heterostructures formed by using an alternative method for stress relaxation were investigated by SIMS and AES. The applied stress reduction method is based on a theoretical approach, which predicts an improvement of the SiC layer quality if Group IV elements are incorporated into the interface between SiC and Si. Germanium was chosen to test this approach. The incorporation of Ge into the heterointerface was carried out by depositing different amounts of Ge prior to the SiC growth process and varying the Ge deposition temperature. SIMS investigations revealed that Ge remains near the SiC/Si interface independently of the pre-deposited amount of Ge. In the case of two monolayers (ML) Ge coverage (with respect to the silicon surface) a surface segregation was observed. This indicates a limited transport of Ge to the SiC surface through the growing SiC layer due to grain boundary diffusion. At Ge coverages between 0.5 ML and 2 ML a sharper interface between the SiC and Si was observed. In this case the tail of the carbon distribution remains within the region occupied by the Ge distribution. The incorporation of Ge at the interface suppresses the out-diffusion of Si from the substrate to the surface of the growing SiC layer and, therefore, impedes the formation of voids at the SiC/Si interface.

Section: Resultsmentioning

confidence: 99%

SIMS investigation of the influence of Ge pre‐deposition on the interface quality between SiC and Si

Pezoldt

Zgheib

Masri

et al. 2004

Self Cite

“…6,7 Subsequently, SiC is formed by a decomposition process of the solid solution initiating a compressive stress in the Si matrix. This stress acts as a driving force for Si interstitial formation.…”

Section: Resultsmentioning

confidence: 99%

Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities

Pezoldt

Morales

Zgheib

et al. 2006

Self Cite

SIMS and transmission electron microscopy studies revealed an improvement of the SiC/Si(100) heterostructure properties if isovalent atoms with larger atomic dimensions than Si and C were used to modify the interface. The Ge incorporation at the interface suppresses the outdiffusion of Si from the substrate to the surface of the growing SiC layer and, therefore, impedes surface and interface roughening as well as the formation of voids at the SiC/Si interface. SIMS measurements obtained revealed that Ge remains at SiC/Si interface independently of the predeposited amount on Si(100) substrates.

“…24 the initial layer growth, it can be considered that SiC is formed in a three-dimensional structure on Si substrates because of the high Si-C bond energy, namely the high SiC surface energy, and the large lattice mismatch (¾20%) between crystalline SiC and crystalline Si (c-Si) substrates. Therefore, the growth of SiC thin films on Si(111) substrates is in Stranski-Krastanow (S-K) growth mode.…”

Section: Resultsmentioning

confidence: 99%

AFM observation of nanosized SiC dots prepared by ion beam deposition

Narumi

Miyashita

et al. 2003

Nanosized silicon carbide (SiC) dots are grown by low-energy mass-selected ion beam deposition (MSIBD) on 4• -off Si(111) substrates at temperatures of 800-950 • C and examined by atomic force microscopy (AFM).We find that the size distribution and the geometrical arrangement of SiC dots strongly depend on the substrate temperature, i.e. highly uniform SiC dots are formed at 800 • C and 850 • C; in particular, SiC dots are arranged in lines when the deposition temperature is as low as 800• C. These results indicate that self-assembled SiC dots can be prepared on misoriented substrates at low deposition temperatures.