Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities

Pezoldt, Jörg; Morales, F. M.; Zgheib, Ch.; Förster, Ch.; Stauden, Thomas; Ecke, G.; Ch, Wang; Masri, P.

doi:10.1002/sia.2240

Cited by 6 publications

(4 citation statements)

References 9 publications

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“…As a consequence, degraded electrical properties of the grown SiC layer and the SiC/Si heterojunction are observed. As shown previously, the interdiffusion can be reduced or suppressed if germanium is deposited prior to the SiC growth, [7,8] and the electrical properties of the SiC/Si heterojunction improves. [3] In this article we report on the effect of Ge predeposition on the early stages of the SiC formation by carbonization, as investigated by spectroscopic methods.…”

Section: Introductionmentioning

confidence: 57%

Spectroscopic investigations of the role of Ge in modifying the Si to SiC conversion process

Pezoldt

Nader

Zgheib

et al. 2008

Surface & Interface Analysis

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The influence of Ge on the conversion process of Si to SiC was studied by depositing Ge and C on Si(111) followed by a stepwise annealing procedure. After the annealing step, the carbon deposited on the surface was completely converted into SiC. In the case of Ge predeposition, the SiC amount detected by XPS, AES and ellipsometry was lower compared to the reference sample in which no Ge was predeposited on the Si(111) surface. Therefore, Ge lowers the probability of SiC formation in the early stages. During the conversion process, Ge diffuses into the Si substrate and is mainly located near the SiC-Si interface with a concentration of around 2.5-3%. As a result of a complex alloying process promoted by interdiffusion of C and Ge as well as SiC nucleation, a thin 3C-SiC layer is formed on top of a Si 1−x Ge x buffer layer.

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Section: Introductionmentioning

confidence: 57%

Spectroscopic investigations of the role of Ge in modifying the Si to SiC conversion process

Pezoldt

Nader

Zgheib

et al. 2008

Surface & Interface Analysis

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“…This is due to the fact that the surface roughness scales with the grain size of the nuclei and therefore, with the nucleation density [18]. The roughness behaviour of the carbonized layer is replicated during the subsequent epitaxial growth [19], i.e. the morphology of the 3C-SiC(100) pseudo-substrate determines the morphology the of the heterosystem.…”

Section: Contributedmentioning

confidence: 99%

“…If the Ge coverage of the surface is properly chosen, the nucleation of the SiC on Si can be designed in such a way that the formed SiC layer exhibit a minimum surface roughness and interface width. This optimum is strongly connected to a minimum of SiC grain size in the converted layer and led to a reduced residual stress [2] and lower surface roughness [19]. The improvements in structure and morphology of the pseudosubstrates are achieved at the expense of reduced SiC thickness.…”

Section: Sims Depth Profile Simulationmentioning

confidence: 99%

Designing the Si(100) conversion into SiC(100) by Ge

Nader

Niebelschütz

Kulikov³

et al. 2010

Phys. Status Solidi (c)

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The deposition of Germanium (Ge) prior to the conversion of Si(100) into 3C‐SiC(100) results in changes of the structure and surface morphology of the formed silicon carbide layer. First of all it reduces the thickness of the 3C‐SiC layer grown during the conversion process and therefore the probability of voids formation. Secondly, it increases the nucleation density of the formed 3C‐SiC nuclei and therefore, decreases the grain size at Ge coverages below two monolayers. These affect the roughness of the SiC surface positively by modifying the width of the SiC‐Si interface. If the Ge coverages exceed two monolayers the structural and morphological properties begin to degrade. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The reports on Ge pre-deposition before carbonization are more numerous. It is shown that Ge remains at the SiC/Si interface and/or in-diffuses inside the Si substrate [76,77]. It modifies SiC nucleation mechanism [78,79] and, for optimal Ge amount, leads to reduced residual stress inside the thin 3C-SiC layer, lower Si out-diffusion from the substrate and also reduction of other polytypes inclusions [80].…”

Section: Ge Addition To 3c-sic Growth On Siliconmentioning

confidence: 99%

Growth and doping of silicon carbide with germanium: a review

Ferro

2021

Critical Reviews in Solid State and Materials Sciences

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This paper review the research works made so far in associating Ge isoelectronic element to SiC crystals, either by incorporating it inside SiC matrix or for assisting SiC epitaxial growth. The incorporation mechanism and level of incorporation of Ge in SiC during crystal growth with different techniques (sublimation, chemical vapor deposition, vapor-liquid-solid) are compared and discussed. Ge doping level as high as 2-3x10 20 at.cm -3 can be reached without affecting SiC crystalline quality but generating some strain. Higher Ge incorporation levels up to few at% can be reached using farer-toequilibrium conditions such as ion implantation or molecular beam epitaxy. The former allows retaining 4H-SiC polytype while the latter leads exclusively to defective 3C-SiC polytype. Adding Ge to SiC crystal growth was also used for promoting 3C-SiC heteroepitaxy on Si and on -SiC substrates, the latter case being more successful. The reported modifications and improvements of SiC crystalline and electronic properties by the incorporation of Ge element are discussed in order to draw or clearer picture of SiC:Ge material. Based on such discussion, some short-and long-term perspectives are proposed 1-IntroductionThe development of any semiconductor based technology requires mastering and understanding a high number of fabrication steps which can be very complex. On material aspect, crystalline quality and purity are essential. The former allows reaching the predicted properties of the material while the latter allows working on the intentional doping type and level of the semiconductor. The n and p type doping elements are usually well identified for each semiconductor and their incorporations using different elaboration techniques are widely documented. The incorporation of metallic impurities is also commonly investigated for improving the semiconductor properties such as increasing resistivity (Fe in GaN [1], V in 4H-SiC [2]), tuning optical emission (Er in GaN [3] or Si [4]) or providing magnetic properties (Mn in GaAs [5] or Ge [6]). Isoelectronic (also named isovalent) doping is similarly frequent in the case of binary (III-V or II-VI) semiconductor compounds due to the usual important miscibility between elements of the same column and/or valence. It can lead to bandgap tuning [7,8], obtaining of new properties [9,10] or crystalline improvement [11,12].In the particular cases of column IVB semiconductors, the isoelectronic doping concerns only elements of the same column which reduces substantially the possibilities. Important solubility exists

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Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities

Cited by 6 publications

References 9 publications

Spectroscopic investigations of the role of Ge in modifying the Si to SiC conversion process

Spectroscopic investigations of the role of Ge in modifying the Si to SiC conversion process

Designing the Si(100) conversion into SiC(100) by Ge

Growth and doping of silicon carbide with germanium: a review

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