Inhomogeneous charging and screening effects in semiconductor quantum dot arrays

Wetzler, R.; Kunert, R.; Wacker, Andreas; Schöll, Eckehard

doi:10.1088/1367-2630/6/1/081

Cited by 8 publications

(5 citation statements)

References 30 publications

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“…The nanodots represent individual nanostructures arranged in nanopatterns; therefore, the main problem in their fabrication is in maintaining a reasonable degree of control over the formation of highly ordered patterns of the nanodots of the required size, shape, composition, ordering and other parameters. At present, three main techniques of nanodot assembly are commonly used: strain‐driven Stranski‐Krastanov (SK) segregation,18 catalytic growth,19 and porous template (PT) techniques 20. Each method has specific advantages and disadvantages 21.…”

Section: Introductionmentioning

confidence: 99%

“…However, both the SK and the catalytic growth techniques exhibit a very poor spatial ordering and size distribution of the developed nanodot patterns. These approaches are impractical for large‐area arrays; moreover, they often result in a quite poor uniformity of the nanodot shapes and sizes 7, 18. On the other hand, nanofabrication approaches based on nanoporous templates provide a much better degree of nanodot ordering13 as compared with the above mentioned two methods.…”

Section: Introductionmentioning

confidence: 99%

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Templated i‐PVD of Metallic Nanodot Arrays

Yuan

Zhong

Levchenko

et al. 2007

Plasma Processes & Polymers

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The results of numerical simulation of plasma‐based, porous, template‐assisted nanofabrication of Au nanodot arrays on highly‐doped silicon taking into account typical electron density of low‐temperature plasma of 1017–1018 m−3 and electron temperature of 2–5 eV are reported here. Three‐dimensional microscopic topography of ion flux distribution over the outer and inner surfaces of the nanoporous template is obtained via numerical simulation of Au ion trajectories in the plasma sheath, in the close proximity of, and inside the nanopores. It is shown that, by manipulating the electron temperature, the cross‐sheath potential drop, and by additionally altering the structure of the nanoporous template, one can control the ion fluxes within the nanopores, and eventually maximize the ion deposition onto the top surface of the developing crystalline Au nanodots (see top panel in the figure). In the same time, this procedure allows one to minimize amorphous deposits on the sidewalls that clutter and may eventually close the nanopores, thus disrupting the nanodot growth process, as it is shown in the bottom panel in the figure on the right.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Templated i‐PVD of Metallic Nanodot Arrays

Yuan

Zhong

Levchenko

et al. 2007

Plasma Processes & Polymers

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“…In this context the microscopic treatment of screening of Coulomb interaction between the QDs is very important, as the location of bulk charge layers changes with bias in a pn-junction [13]. This demonstrates that level broadening and Coulomb interaction are two features which cannot be treated separately in a quantum dot array.…”

Section: Coulomb Interaction Within a Quantum Dot Layermentioning

confidence: 99%

Theory of Nonlinear Transport for Ensembles of Quantum Dots

Kießlich¹,

Wacker²,

Schöll³

2008

Semiconductor Nanostructures

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“…As a result, the originally uniform pattern of quantum dot nuclei is affected by the retarded growth of larger QDN and evolves into a pattern with substantially reduced densities of large seed nuclei. In most existing neutral gas-based techniques Ge/Si(100) QDs follow the SK growth scenario, [36] which is very sensitive to the surface state, stresses, and other conditions. This is why it is nearly impossible to control the fragmentation of a continuous film, which leads to ripening of Ge/Si quantum dots -that is, consumption of smaller QDs in favour of large QD formation.…”

Section: Physical Interpretationmentioning

confidence: 99%

Ge/Si Quantum Dot Formation From Non‐Uniform Cluster Fluxes

Rider

Levchenko

Ostrikov

et al. 2007

Plasma Processes & Polymers

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The controlled growth of ultra‐small Ge/Si quantum dot (QD) nuclei (≈1 nm) suitable for the synthesis of uniform nanopatterns with high surface coverage, is simulated using atom‐only and size non‐uniform cluster fluxes. It is found that seed nuclei of more uniform sizes are formed when clusters of non‐uniform size are deposited. This counter‐intuitive result is explained via adatom‐nanocluster interactions on Si(100) surfaces. Our results are supported by experimental data on the geometric characteristics of QD patterns synthesized by nanocluster deposition. This is followed by a description of the role of plasmas as non‐uniform cluster sources and the impact on surface dynamics. The technique challenges conventional growth modes and is promising for deterministic synthesis of nanodot arrays.magnified image

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Inhomogeneous charging and screening effects in semiconductor quantum dot arrays

Cited by 8 publications

References 30 publications

Templated i‐PVD of Metallic Nanodot Arrays

Templated i‐PVD of Metallic Nanodot Arrays

Theory of Nonlinear Transport for Ensembles of Quantum Dots

Ge/Si Quantum Dot Formation From Non‐Uniform Cluster Fluxes

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