Ge/Si Quantum Dot Formation From Non‐Uniform Cluster Fluxes

Rider, Amanda; Levchenko, Igor; Ostrikov, Kostya Ken; Keidar, Michael

doi:10.1002/ppap.200700043

Cited by 14 publications

(8 citation statements)

References 56 publications

(67 reference statements)

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“…There are numerous and sufficiently experienced fabrication methods [6]. Thanks to such methods, quantum dots with different geometrical confinements can be generated, and such systems provide important experiences both experimentally and theoretically [7–10]. In this manner, there are a great deal of confinement examples that are considered theoretically by researchers [11–14].…”

Section: Introductionmentioning

confidence: 99%

Optical response of plasma processed quantum dot under the external fields

Kılıç

Bahar

2020

Int J of Quantum Chemistry

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We investigate theoretically the total refractive index changes (TRICs) and the total absorption coefficients (TACs) of two‐electron Gaussian quantum dot (TEGQD) including Gaussian potential confinement generated by GaAs/GaAlAs heterostructure, embedded in Debye and quantum plasma environments modeled by the more general exponential cosine screened Coulomb (MGECSC) potential, under the influence of the external electric and magnetic field. The wave equation is solved within the effective mass approach framework by using Runge–Kutta–Fehlberg method in order to obtain the subband spectra and the electronic wave functions of TEGQD. Nonlinear optical response of TEGQD is obtained through the compact‐density‐matrix formalism within the iterative method. The effects of both Debye and quantum plasma environments in the strong and weak regimes of the external fields are considered and compared throughout the study. The potents of the external electric field, the external magnetic field, the quantum dot width, the barrier height, and the plasma screening on TRICs and TACs resonant frequencies and amplitudes are analyzed. In addition to these analyses, the alternatives to each parameter effects of the model are also elucidated. TRICs and TACs analyze are carried out in a plasma‐free environment, and thus the function of environments with plasma compared to that without plasma is better explained. Thanks to all these reviews, it is elucidated how to and at what ranges perform in terms of the incident photon energy of TEGQD's optimum for TRICs and TACs characters by using plasma, and in which cases it will be an alternative to the external field and geometrical encompassing.

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Section: Introductionmentioning

confidence: 99%

Optical response of plasma processed quantum dot under the external fields

Kılıç

Bahar

2020

Int J of Quantum Chemistry

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“…This is due to the faster adatom diffusion rates. One way to sharpen the size distribution of a QD pattern is to shorten t d and instead include clusters in the influx [41]; if this is the case then a robust method for cluster composition, size and relative density in the influx is required. One particular cluster source suitable for this purpose is a plasma discharge [41], which, as shown in previous papers [41,42], can lead to highly size-uniform QDN/QD patterns.…”

Section: Plasma/ion-related Effects During Nanoassemblymentioning

confidence: 99%

Tailoring the composition of self-assembled Si_1−xC_xquantum dots: simulation of plasma/ion-related controls

2008

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Precise control of composition and internal structure is essential for a variety of novel technological applications which require highly tailored binary quantum dots (QDs) with predictable optoelectronic and mechanical properties. The delicate balancing act between incoming flux and substrate temperature required for the growth of compositionally graded (Si(1-x)C(x); x varies throughout the internal structure), core-multishell (discrete shells of Si and C or combinations thereof) and selected composition (x set) QDs on low-temperature plasma/ion-flux-exposed Si(100) surfaces is investigated via a hybrid numerical simulation. Incident Si and C ions lead to localized substrate heating and a reduction in surface diffusion activation energy. It is shown that by incorporating ions in the influx, a steady-state composition is reached more quickly (for selected composition QDs) and the composition gradient of a Si(1-x)C(x) QD may be fine tuned; additionally (with other deposition conditions remaining the same), larger QDs are obtained on average. It is suggested that ionizing a portion of the influx is another way to control the average size of the QDs, and ultimately, their internal structure. Advantages that can be gained by utilizing plasma/ion-related controls to facilitate the growth of highly tailored, compositionally controlled quantum dots are discussed as well.

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“…Owing to the many unique properties of reactive plasmas,20–26 carbon‐based nanostructures,27–34 such as carbon nanotubes (CNTs) and carbon nanofibers (CNFs) can be grown via plasma enhanced chemical deposition (PECVD) in large arrays and feature a greater degree of vertical alignment15, 16, 35 compared to nanostructures synthesized in neutral gas‐based thermal processes, such as chemical vapor deposition (CVD). Controlled PECVD synthesis takes place in the plasma sheath.…”

Section: Introductionmentioning

confidence: 99%

Heating and Plasma Sheath Effects in Low‐Temperature, Plasma‐Assisted Growth of Carbon Nanofibers

Mehdipour

Ostrikov

Rider

et al. 2011

Plasma Processes & Polymers

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Plasma sheath, nanostructure growth, and thermal models are used to describe carbon nanofiber (CNF) growth and heating in a low‐temperature plasma. It is found that when the H2 partial pressure is increased, H atom recombination and H ion neutralization are the main mechanisms responsible for energy release on the catalyst surface. Numerical results also show that process parameters such as the substrate potential, electron temperature and number density mainly affect the CNF growth rate and plasma heating at low catalyst temperatures. In contrast, gas pressure, ion temperature, and the C2H2:H2 supply ratio affect the CNF growth at all temperatures. It is shown that plasma‐related processes substantially increase the catalyst particle temperature, in comparison to the substrate and the substrate‐holding platform temperatures.

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Ge/Si Quantum Dot Formation From Non‐Uniform Cluster Fluxes

Cited by 14 publications

References 56 publications

Optical response of plasma processed quantum dot under the external fields

Optical response of plasma processed quantum dot under the external fields

Tailoring the composition of self-assembled Si_1−xC_xquantum dots: simulation of plasma/ion-related controls

Heating and Plasma Sheath Effects in Low‐Temperature, Plasma‐Assisted Growth of Carbon Nanofibers

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Ge/Si Quantum Dot Formation From Non‐Uniform Cluster Fluxes

Cited by 14 publications

References 56 publications

Optical response of plasma processed quantum dot under the external fields

Optical response of plasma processed quantum dot under the external fields

Tailoring the composition of self-assembled Si1−xCxquantum dots: simulation of plasma/ion-related controls

Heating and Plasma Sheath Effects in Low‐Temperature, Plasma‐Assisted Growth of Carbon Nanofibers

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Tailoring the composition of self-assembled Si_1−xC_xquantum dots: simulation of plasma/ion-related controls