InGaP∕InGaAs∕GaAs camel-gate p-channel pseudomorphic modulation-doped field effect transistor

Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits

“…The quantum well strain and sheet carrier density vary considerably amongst the samples. Data are from the following references: InGaAs [22][23][24][25][26][27], InGaAs/InGaP [28], GaSb [8,12,29], InGaSb [13,30], and InSb [16,31]. similar hole densities [12].)…”

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

“…The spectrum of possibilities open to such III-V heterostructure design is best revealed by the plot of the energy bandgap of various semiconductors versus their lattice constant with a 1-μm gate length demonstrated a transconductance of 63 mS/mm, a turnon voltage greater than 2 V, a broad 4 V gate voltage swing, and an f T of 3.1 GHz. 8 With respect to the InP-based material system, both lattice matched and strained In 0.52 Al 0.48 As/In x Ga 1−x As p-channel FETs were investigated. A comparison between a dual channel design with low doping and a single channel design with high doping found that the latter exhibited the best direct-current and radio-frequency performance due to preferential loweffective-mass band occupation.…”

“…6,[9][10][11][12][13] Only one more recent paper described an InGaAs alloy and an InGaP barrier with a hole mobility as high as 875 cm 2 /Vs. 8 For further progress, the recent n-channel work and information in Table I suggest moving further to the right in Figure 1 and using GaSb, InSb, or their alloys (In x Ga 1−x Sb). Although early work in this direction with GaSb channels and AlGaSb barriers achieved room-temperature hole mobilities of only 180-270 cm 2 /Vs, 14,15 the last two years have seen important progress (see Figure 2) by our group at the Naval Research Laboratory (NRL) [16][17][18] and by a collaboration between Intel and QinetiQ Corporations.…”

A novel GaAs FET with double camel-like gate structure

“…Over the past years, due to the pn depletion in gate region the n p n camel-like gate FETs performing with high barrier heights were well investigated [8]- [11]. The camel-like gate also provides some advantages when compared with conventional Schottky gate, such as 1) elimination of the metallurgical difficulties due to the ohmic contact, 2) relatively easy adjustment of the built-in voltage, and 3) the potential for improving reliability in adverse environments and under high power dissipation conditions [8]- [10].…”

“…The camel-like gate also provides some advantages when compared with conventional Schottky gate, such as 1) elimination of the metallurgical difficulties due to the ohmic contact, 2) relatively easy adjustment of the built-in voltage, and 3) the potential for improving reliability in adverse environments and under high power dissipation conditions [8]- [10]. Recently, we have fabricated and demonstrated n-and p-channel camel-like gate pseudomorphic MODFETs (pMODFETs) [10], [11]. A gate turn-on voltage larger than 1.7 V (2 V) was achieved which can be attributed to the pn depleted junction and the presence of large conduction Manuscript (valence) band discontinuity at InGaP/InGaAs heterostructure for the n-channel (p-channel) pMODFET.…”