A novel GaAs FET with double camel-like gate structure

Abstract

Extremely high potential barrier height and gate turn-on voltage of a novel GaAs field-effect transistor with n + p + n + p + n double camel-like gate structure are demonstrated. The maximum electric field and potential barrier height of the double camel-like gate are substantially enhanced by the addition of another n + p + layers in gate region, as compared with the conventional n + p + n single camel-like gate. For a 1 100 m 2 device, a potential barrier height up to 2.741 V is obtained. Experimentally, a high gate turn-on voltage up to +4 9 V is achieved because two reverse-biased junctions of the double camel-like gate absorb part of positive gate voltage. In addition, the transistor action shows a maximum saturation current of 730 mA/mm and an extrinsic transconductance of 166 mS/mm. Index Terms-Camel-like gate, field-effect transistor, GaAs, potential barrier height, turn-on voltage.

Hydrogen-Induced Effect on Device Performance of a Pd/GaAs-Based Heterostructure Field-Effect Transistor

“…3,6 Among them, heterostructure field-effect transistors ͑HFETs͒ have been widely used in highspeed, high-frequency, microwave, and optoelectronic applications. [7][8][9][10][11] Based on the combination of HFETs and catalytic metals, the potential for microsensors and microelectromechanical system applications is appreciably promising.…”