InGaP/GaAs/InGaP double heterostructure bipolar transistors with carbon-doped base grown by CBE

Chen, Y.K.; Rapre, R.; Tsang, W. T.; Wu, M.C.

doi:10.1049/el:19920775

Cited by 30 publications

(3 citation statements)

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“…1,2 The composite collector structure has been proposed 3,4 to improve the current-voltage (I -V) characteristic of a DHBT device. Such devices should exhibit high gain, high breakdown, low collector-emitter offset voltage (V CE͑offset) ) and low knee voltage (V k ).…”

Section: Introductionmentioning

confidence: 99%

InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor with high breakdown, low offset, and knee voltage

Lew

Zhang

Yoon

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inTemperature-dependent dc characteristics of an In Ga As ∕ In Ga As P heterojunction bipolar transistor with an InGaAsP spacer and a composite-collector structure Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor J. Appl. Phys. 93, 605 (2003); 10.1063/1.1521513Analysis of collector-emitter offset voltage of InGaP/GaAs composite collector double heterojunction bipolar transistor A InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor ͑DHBT͒ has been designed and fabricated to combine the advantages of single heterojunction bipolar transistor ͑SHBT͒ and conventional DHBT. The device has low collector-emitter offset voltage ͑ϳ60 mV͒ and knee voltage ͑Ͻ1 V͒. The breakdown voltage of ϳ14 V is as high as that of a conventional DHBT. Comparison was made with a GaAs homojunction bipolar transistor and InGaP/GaAs SHBT. Both homojunction transistor and composite collector DHBT show similar collector-emitter offset voltage dominated by the geometrical factor. The knee voltage of the composite collector DHBT is ϳ0.15 V lower than that of the InGaP/GaAs SHBT. The results demonstrate the potential of composite collector DHBTs for practical power amplifier applications.

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Section: Introductionmentioning

confidence: 99%

InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor with high breakdown, low offset, and knee voltage

Lew

Zhang

Yoon

2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…A lowly doped GaAs spacer layer between the GaAs base and the GaInP collector can lower the potential spike below the conduction band in the base. [3][4][5] In addition, highly doped GaAs and/or GaInP layer can be incorporated to reduce the potential spike width and increase the tunneling probability through the potential spike. [4][5][6][7] These modified composite collector designs are effective in minimizing the potential spike effects, but at the expense of the reduced ␤ and breakdown voltages, [3][4][5][6][7] and the presence of negative dif-ferential resistance 8 ͑NDR͒ in the transistor output characteristics.…”

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confidence: 99%

Ga In P ∕ Ga As double heterojunction bipolar transistor with GaAs∕Al0.11Ga0.89As∕GaInP composite collector

Poh

Yow

Houston

et al. 2006

Journal of Applied Physics

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Ga In P ∕ Ga As ∕ Ga In P double heterojunction bipolar transistor (DHBT) with an Al0.11Ga0.89As layer within lowly doped GaAs–GaInP composite collector was characterized. In comparison to an abrupt GaInP∕GaAs∕GaInP DHBT with saturation voltages in excess of 20V, current gains of 25 at high biases, and breakdown voltages in the range of 22V, the DHBT incorporating GaAs–Al0.11Ga0.89As–GaInP composite collector has demonstrated lower saturation voltages of less than 6V and high current gains of 50 without compromising the breakdown voltages of the GaInP collector. Al0.11Ga0.89As layer can thus provide an alternative design to effectively minimize the potential spike effects at the GaAs∕GaInP heterojunction.

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“…Most of this band gap difference appears in the valence band with ⌬E v = 240-300 meV, reducing, in principle, in an important way the injection of holes from the GaAs into the GaInP region. [2][3][4][5] The corresponding discontinuity in the conduction band, ⌬E c , being much smaller results in an almost unchanged ability to inject electrons from the GaInP into the GaAs. These energy band conditions are well adapted for getting an Npn heterojunction transistor with the n-GaInP as the emitter, which should lead to a severe confinement of holes in the transistor base, resulting in a high emitter electron injection efficiency.…”

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confidence: 99%

Currents of the GaInP∕GaAs heterojunction bipolar transistor as a function of the temperature

Mimila-Arroyo

Cabrera-Arenas

2006

Applied Physics Letters

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InGaP/GaAs/InGaP double heterostructure bipolar transistors with carbon-doped base grown by CBE

Cited by 30 publications

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InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor with high breakdown, low offset, and knee voltage

InGaP/GaAs/InGaP composite collector double heterojunction bipolar transistor with high breakdown, low offset, and knee voltage

Ga In P ∕ Ga As double heterojunction bipolar transistor with GaAs∕Al0.11Ga0.89As∕GaInP composite collector

Currents of the GaInP∕GaAs heterojunction bipolar transistor as a function of the temperature

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