Ga In P ∕ Ga As ∕ Ga In P double heterojunction bipolar transistor (DHBT) with an Al0.11Ga0.89As layer within lowly doped GaAs–GaInP composite collector was characterized. In comparison to an abrupt GaInP∕GaAs∕GaInP DHBT with saturation voltages in excess of 20V, current gains of 25 at high biases, and breakdown voltages in the range of 22V, the DHBT incorporating GaAs–Al0.11Ga0.89As–GaInP composite collector has demonstrated lower saturation voltages of less than 6V and high current gains of 50 without compromising the breakdown voltages of the GaInP collector. Al0.11Ga0.89As layer can thus provide an alternative design to effectively minimize the potential spike effects at the GaAs∕GaInP heterojunction.
Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor J. Appl. Phys. 93, 605 (2003); 10.1063/1.1521513Analysis of collector-emitter offset voltage of InGaP/GaAs composite collector double heterojunction bipolar transistor GaInP/GaAs/GaInP double heterojunction bipolar transistors incorporating dead-space corrected composite collectors were investigated experimentally. The optimized DHBT with a 10-nm lowly doped GaAs spacer and a 5-nm highly doped GaInP spacer has extended the operating range of the collector-emitter voltage, V CE , by maximizing the collector-emitter voltage at the onset of the multiplication, V CE,onset , to 20 V, while minimizing the saturation voltage, V CE,sat ͑Ͻ1 V͒, and maintaining the nominal breakdown voltage, BV CEO , of the GaInP collector at 25 V. The design incorporating an Al 0.11 Ga 0.89 As spacer rather than a GaInP spacer within the lowly doped GaAs-GaInP composite collector demonstrated similar breakdown behavior.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.