Ga
                In
                P
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                As
           double heterojunction bipolar transistor with GaAs∕Al0.11Ga0.89As∕GaInP composite collector

Poh, Z. S.; Yow, H. K.; Houston, P.A.; Krysa, A. B.; Ong, Duu Sheng

doi:10.1063/1.2218027

Cited by 5 publications

(3 citation statements)

References 11 publications

(3 reference statements)

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“…The ternary gallium indium phosphide (GaInP) alloy is widely used in bipolar transistors [1][2][3], in various heterojunction nanostructures [4,5], as well as in efficient single and multijunction solar cells as the largest bandgap top cell [6][7][8]. Moreover, cells based on GaInP 2 lattice-matched with GaAs or Ge substrates are very promising for solar water splitting [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Surface potential in n- and p-GaInP₂(100): temperature effect

Лебедев¹,

Savchenko²,

Averkiev³

et al. 2021

J. Phys. D: Appl. Phys.

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Surface potentials in chemically etched n- and p-GaInP2(100) are investigated by synchrotron-radiation photoemission spectroscopy at room and liquid-nitrogen temperatures. It is found that at low temperature the surface band bending in both n- and p-GaInP2(100) is reduced so that the surface bands become nearly flat. This effect is explained in the framework of semiconductor surface electrostatics. The proposed model enables quantitative characterization of the surface state spectrum based on the experimentally determined values of the surface potential at different temperatures. In particular, the surface states density values obtained are 2 × 1012 and 7 × 1012 cm–2 for n- and p-GaInP2(100) surfaces, respectively.

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Section: Introductionmentioning

confidence: 99%

Surface potential in n- and p-GaInP₂(100): temperature effect

Лебедев¹,

Savchenko²,

Averkiev³

et al. 2021

J. Phys. D: Appl. Phys.

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“…Gallium indium phosphide (GaInP) is a ternary semiconductor compound applicable in heterojunction electronic devices − and nanostructures. , In addition, GaInP 2 is widely used as the largest bandgap top cell in efficient single and multijunction solar cells, − and it has been employed for photoelectrochemical water splitting, , as its band gap of 1.8–1.9 eV is large enough to cover the difference between H 2 /H 2 O and O 2 /H 2 O redox potentials.…”

Section: Introductionmentioning

confidence: 99%

Synchrotron Photoemission Spectroscopy Study of p-GaInP₂(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions

et al. 2017

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(Photo)electrochemical processes occurring under cathodic polarization at the p-GaInP2(100)/1 M HClaq solution interface were investigated in detail by high-resolution surface sensitive synchrotron-radiation photoemission spectroscopy. It was found that on application of the cathodic bias in the dark to the p-GaInP2(100)/1 M HClaq solution interface the electrochemical processes are started at a bias of about −1.0 V vs reversible hydrogen electrode (RHE), where cathodic current passing through the semiconductor/electrolyte interface starts to rise. Under higher cathodic bias applied in the dark, hydroxyl groups and metallic gallium are accumulated at the surface, which is accompanied by a decrease in work function of the semiconductor. Accumulation of hydroxyl groups can be related only to splitting of water molecules at the semiconductor/electrolyte interface, since the aqueous HCl solution contains no hydroxyl groups intrinsically. Accumulation of hydroxyl groups and metallic gallium is accelerated under visible light illumination, which indicates participation of photogenerated electrons in the surface electrochemical reactions. The formation of the metallic gallium without simultaneous metallic indium formation testifies that the In–P bonds of the GaInP2 compound are more stable against cathodic corrosion than the Ga–P bonds.

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“…The onset of multiplication and breakdown can be confined in the larger band-gap GaInP collector for improved breakdown performance, provided the dead-space width is larger than the combined width of the lowly doped GaAs spacer and the highly doped GaInP spacer. 6 The base sheet resistance for DHBT-I and DHBT-II is measured to be 290 ⍀ / ᮀ and 290 ⍀ / ᮀ, respectively. The same analytical model was revised to study the performance of GaInP/GaAs/GaInP DHBTs ͑DHBT-II͒ using a lowly doped GaAs spacer in combination with a lowly doped Al 0.11 Ga 0.89 As spacer.…”

mentioning

confidence: 99%

Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors

Poh

Yow

Ong

et al. 2007

Journal of Applied Physics

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Effect of composite collector design on the breakdown behavior of InGaP/GaAs double heterojunction bipolar transistor J. Appl. Phys. 93, 605 (2003); 10.1063/1.1521513Analysis of collector-emitter offset voltage of InGaP/GaAs composite collector double heterojunction bipolar transistor GaInP/GaAs/GaInP double heterojunction bipolar transistors incorporating dead-space corrected composite collectors were investigated experimentally. The optimized DHBT with a 10-nm lowly doped GaAs spacer and a 5-nm highly doped GaInP spacer has extended the operating range of the collector-emitter voltage, V CE , by maximizing the collector-emitter voltage at the onset of the multiplication, V CE,onset , to 20 V, while minimizing the saturation voltage, V CE,sat ͑Ͻ1 V͒, and maintaining the nominal breakdown voltage, BV CEO , of the GaInP collector at 25 V. The design incorporating an Al 0.11 Ga 0.89 As spacer rather than a GaInP spacer within the lowly doped GaAs-GaInP composite collector demonstrated similar breakdown behavior.

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Ga In P ∕ Ga As double heterojunction bipolar transistor with GaAs∕Al0.11Ga0.89As∕GaInP composite collector

Cited by 5 publications

References 11 publications

Surface potential in n- and p-GaInP₂(100): temperature effect

Surface potential in n- and p-GaInP₂(100): temperature effect

Synchrotron Photoemission Spectroscopy Study of p-GaInP₂(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions

Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors

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Ga In P ∕ Ga As double heterojunction bipolar transistor with GaAs∕Al0.11Ga0.89As∕GaInP composite collector

Cited by 5 publications

References 11 publications

Surface potential in n- and p-GaInP2(100): temperature effect

Surface potential in n- and p-GaInP2(100): temperature effect

Synchrotron Photoemission Spectroscopy Study of p-GaInP2(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions

Dead-space corrected GaInP/GaAs composite collector double heterojunction bipolar transistors

Contact Info

Product

Resources

About

Surface potential in n- and p-GaInP₂(100): temperature effect

Surface potential in n- and p-GaInP₂(100): temperature effect

Synchrotron Photoemission Spectroscopy Study of p-GaInP₂(100) Electrodes Emersed from Aqueous HCl Solution under Cathodic Conditions