InGaN self‐organized quantum dots grown by metalorganic chemical vapour deposition (MOCVD)

Abstract

InGaN self-organized quantum dots (QDs) have been grown on sapphire (0001) substrates by lowpressure metalorganic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM) measurements revealed the formation of InGaN QDs grown at 760 o C on a very thin AlN template. No InGaN QDs were formed when the amount of InGaN deposited was less than 5 monolayers (MLs), whereas selforganized QDs appear on the surface with further increase in the number of InGaN MLs. For the typical 15 MLs InGaN QDs grown by this technique, the average diameter and height of the QDs are 19.5 and 7.5 nm, respectively, with a dot density of about 1.3 × 10 11 cm -2 . Room temperature microphotoluminescence measurements show blue (2.86 eV) to green (2.31 eV) emission when the InGaN QDs deposited on the thin AlN layer increased from 15 to 35 MLs.

Influence of ion beam bombardment on characteristic of InGaN/GaN single quantum well grown by metal–organic chemical vapor deposition

“…PL spectra of GaN buffer layer have an emission peak at 362.2 nm (3.41 eV) and InGaN/GaN SQWs have an emission peak from 441.1 to 446.6 nm (2.8-2.7 eV). The emission peak in PL measurement for In x Ga 1−x N was known in the previous reports [9,10]. According to the previous reports, 446.6 nm PL peak was appeared in the composition of In 0.1 Ga 0.9 N. Hence, the composition estimated from the PL spectra was in good agreement with that from the AES analysis.…”

Growth behaviour of InGaN/GaN self‐assembled quantum dots with different growth conditions in horizontal MOCVD

“…The peak position in the PL measurement spectra for In x Ga 1-x N is reported elsewhere [13,14]. According to those previous reports, the peak position at 2.96-2.70 eV in PL spectra was estimated to correspond to In 0.12-0.15 Ga 0.88-0.85 N. This is comparable to the PL peak at 435 nm (2.86 eV) observed previously for In 0.14 Ga 0.86 N quantum dots [11].…”

Self-Assembled Zinc Oxide Quantum Dots Using Spray Pyrolysis Methodology

“…To produce nanostructures, it has been demonstrated that a very slow growth rate is needed when using techniques such as molecular beam Epitaxy (growth rate ∼0.03–0.4 monolayer/s) and MOCVD. − In particular regarding the growth of QDs by MOCVD, a slow growth rate has proved to provide a better crystalline quality and a narrower size distribution . In the present study by means of the SP technique we have used a concentration (molarity) ranging from 0.025 to 0.00625 M for the zinc acetate precursor solution that is about 10 times lower than the precursor concentration used for the growth of ZnO thin films by SP .…”