Influence of ion beam bombardment on characteristic of InGaN/GaN single quantum well grown by metal–organic chemical vapor deposition

Abstract

The influence of ion beam bombardment on sapphire substrate was investigated on the electrical and optical characteristics of Indium-Gallium-Nitride/GalliumNitride (InGaN/GaN) single quantum well (SQW) structure. Ion bombardment of N + , He + , H + ions were made on single crystal substrate of sapphire with dose of 1×10 14-17 ions/cm 2 . The InGaN/GaN SQW was fabricated on the ion beam bombarded sapphire substrate in two-flow Metal Organic Chemical Vapor Deposition (MOCVD) equipment. The thickness of InGaN/GaN SQW was about 20 nm and the composition of InGaN/GaN SQW was found to be In 0.1 Ga 0.9 N. In PL spectra, it is found that InGaN/GaN SQW was emitted from 441.1 to 446.6 nm (2.8-2.7 eV). The highest mobility value of 118 cm 2 /V-S and the lowest carrier concentration of 3.41×10 17 /cm 2 was found for N of 10 16 ions/cm 2 ion beam bombarded sample. The optimal condition for InGaN/GaN SQW on sapphire substrate of ion beam bombardment was deduced to be N + ion dose of 10 16 ions/cm 2 .