1984
DOI: 10.1109/jqe.1984.1072495
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InGaAsP/InP buried crescent laser diode emitting at 1.3 µm wavelength

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Cited by 26 publications
(2 citation statements)
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“…The fabrication processes of the laser involve two-step liquid-phase epitaxy (LPE) growth which has been described in great detail in the literature [6]. The only difference is the growth of two active layers by the "threemelt technique" [5].…”
Section: Introduction Here Has Been Continuous Interest In Making In-mentioning
confidence: 99%
“…The fabrication processes of the laser involve two-step liquid-phase epitaxy (LPE) growth which has been described in great detail in the literature [6]. The only difference is the growth of two active layers by the "threemelt technique" [5].…”
Section: Introduction Here Has Been Continuous Interest In Making In-mentioning
confidence: 99%
“…To get rid of the degradation, a new "displaced" buried crescent (D BC) laser structure in which the p-n junction is displaced from the exposed surface by means of Zn diffusions from P-InP blocking layer to the n-lnP cladding layer during and after the second growth was proposed by Hirano et at (1983). The lasing characteristics of the BC lasers are obviously improved (Oomura et al 1984) to make InGaAsP/InP lasers a suitable light source for optical fibre communications.…”
Section: Introductionmentioning
confidence: 99%