Double-active-layer index-guided InGaAsP-InP laser diode

Abstract

Abstract-A buried crescent InGaAsP-InP laser with two active layers was fabricated to study the temperature behavior of the doublecarrier-confinement structure. An anomalously high-characteristic temperature To was measured and an optical switching behavior was observed. A model analysis and numerical calculation using a rate equation approach explained qualitatively very well the experimental results. It was revealed that not only the Auger recombination in this special double-active-layer configuration, but that the temperature dependent leakage current, which leads to uniform carrier distribution in both active regions, is essential to increase To.

Plasma frequency and dielectric function dependence on doping and temperature for p-type indium phosphide epitaxial films

“…Although p-InP was used as a waveguide/current blocking layer in quantum cascade laser [6] (QCL) structures, information about its absorption properties would be useful for the overall modeling on the laser performance. In addition, p-InP can also be one of the important components in p-n laser diodes such as dual wavelength lasers based on the bipolar cascade laser [7] (BCL) structures and InGaAsP/InP laser diodes [8,9]. Therefore, it is helpful to have knowledge of p-type InP thin film material properties such as absorption and refractive index for understanding/modeling these QCL structures and also focusing on the other kinds of laser structures which use optical properties of p-InP directly.…”