InGaAsN/GaAs heterostructures for long-wavelength light-emitting devices

Abstract

Abstract. We report on the growth and properties of InGaAsN/GaAs heterostructures and on their applications for lasers emitting at X -1.3 jIm. Structures are grown by molecular beam epitaxy using an RF plasma-source. Broad area and ridge waveguide laser structures based on such QWs exhibit performance that can compete with those of 1.3 /m InGaAsP lasers. In particular, we have achieved 300 K operation of broad area lasers at 1.3 /Im with threshold current density down to 400 A/cm 2 and 650 A/cm 2 for single and triple QW structures. Similar structures with heatsinking at 10'C yield maximum output powers of 2.4 W (cw) and 4 W (pulsed). Ridge waveguide lasers have thresholds down to 16 mA and show cw operation up to 10"C with a To of up to 110 K.

Localization effects in InGaAsN multi-quantum well structures

“…A comprehensive review is given in Ref. [3]. The characteristics of broad area lasers measured in a pulsed operation (pulse width t0/2 ms and repetition frequency f0/5 kHz) are a threshold current density of 0.5 kA cm (2 , a laser wavelength of 1.295 mm, and a T 0 of 60 K. Typical data for ridge-waveguide lasers are threshold currents of 16 mA, laser wavelengths around 1.295 mm, and T 0 of 80 K. VCSELs based on InGaAsN MQWs emit in cw operation at 1.305 mm till 80 8C, providing an output power of 1 mW at 25 8C.…”

“…Furthermore, the opposite effect of In and N on the lattice constant enables latticematching of InGaAsN on GaAs [1,2]. Most attractive is the realization of 1.3 mm vertical cavity surface emitting lasers (VCSELs) on GaAs using the well-established AlAs/GaAs distributed Bragg reflector (DBR) techniques [3,4]. Unfortunately, however, an increasing nitrogen content often reduces the luminescence efficiency, and so the laser threshold grows up [5,6].…”

Post-growth thermal annealing of high N-content GaAsN by MOVPE and its effect on strain relaxation

“…This may be due to comparatively to the lower growth temperature commonly used for the III-V nitrides, compared to that for GaAs. Post-growth thermal annealing can improve the luminescence properties significantly, but leads to a blue shift of the photoluminescence (PL) peak energy [7][8][9]. The structural origin of the effects of post-growth annealing treatments has been an issue.…”

Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy

“…One of the key issues of these III-III-V-N type alloys is the compositional fluctuation in the microscopic scale, that may be responsible for some anomalous optical properties. In the InGaAsN alloy, it is known that the optical properties can be greatly improved by the rapid thermal annealing (RTA) at temperature higher than the growth temperature [5][6][7]. In this work, we have studied the RTA effect on the optical properties of InGaPN alloy layers grown on GaP (0 0 1) substrates by metalorganic vapor phase epitaxy (MOVPE), aiming to demonstrate the RTAinduced improvement in the InGaPN film quality in connection with the compositional fluctuation.…”