Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy

We investigate the parameters in the band-anticrossing (BAC) model for GaNP and InGaPN in this work. The parameters in the BAC model for GaNP and InGaNP are obtained by fitting experimental data. It is found that the band gap bowing of InGaNP is stronger than that of InGaNAs. The effects of annealing on the parameters in the BAC model for InGaNP are also discussed in this work. In addition, the origins for improving luminescence efficiency by annealing are explained. It is relative to the forming of more In-N clusters. InGaNP, band gap bowing, annealingPACS: 78.20.Bh III-V dilute nitride semiconductors have attracted much attention due to their potential applications in microelectronic and optoelectronic devices. Among the newest members of the dilute nitrides family, In x Ga 1x N y P 1y has been suggested as a material for GaInP/GaAs based Heterojunction Bipolar Transistors (HBTs). We know that the incorporation of a small amount of nitrogen in GaN and InGaAs can lead to huge band gap bowing [1]. It has been found that incorporating nitrogen into GaP and InGaP has a similar effect [2][3][4]. Shan et al.[1] successfully used the bandanticrossing (BAC) model to describe the dependence of the band gap energy of InGaNAs on its composition. The BAC model can be also used to describe the dependence of the band gap energy of GaPN and InGaNP on their compositions [2][3][4]. For GaNP, the parameters in the BAC model have been given by several groups [3-4], but the difference of their results is obvious. For InGaNP, as far as we know, the parameters in the BAC model needed to be further verified accurately due to the limited experimental data and poor accuracy of InGaNP alloy content. In addition, the effects of annealing on the parameters in the BAC model are seldom discussed. In this paper, we summarize the work done by other groups and obtain the parameters in the BAC model at room temperature for GaN y P 1y and In x Ga 1x N y P 1y . The annealing effects on the parameters in the BAC model for InGaNP and the origin for improving luminescence efficiency after annealing are also discussed.

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“…According to the above analysis and the experimental data [7,9,10,13,14], we obtained 1 b =0.5 eV and 2 b =6.0 eV. InGaNP.…”

Section: Resultsmentioning

confidence: 69%

“…for In x Ga 1x N y P 1y alloys in this work with the experimental data (The experimental data in ref. [14] has been corrected by the temperature shift [10,15]). The thermodynamic solubility of N and InGaP is very low, so phase separation, clustering and ordering are very common in InGaNP [9,10,16].…”

Section: Resultsmentioning

confidence: 99%

The parameters in the band-anticrossing model for In x Ga1−x N y P1−y before and after annealing

Zhao

Zhang

Liu

et al. 2011

Sci. China Phys. Mech. Astron.

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“…The key advantage of III-N-V/Si MJSCs is that the materials can be monolithically grown by MOVPE without metamorphic epilayers. However, the research on III-N-V/Si solar cell is still in the initial stage and faces many obstacles, such as heteroepitaxy of GaP layer on Si [14][15][16][17], fabrication of Si subcell [18][19][20][21] and growth of high quality III-N-V material [22][23][24][25][26]. In this paper, III-N-V/Si DJ solar cell is designed by integrating LM GaNAsP (or GaInNP) p-n junction on active-Si substrate.…”

Section: Introductionmentioning

confidence: 99%

Theoretical investigation of lattice-matched III-N-V/Si double-junction solar cells

Zhang

Li²,

Chen³

et al. 2022

J. Phys. D: Appl. Phys.

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The lattice-matched III-N-V/Si double-junction (DJ) solar cells are designed with GaNAsP and GaInNP top cells, respectively. Under AM1.5G condition, the efficiencies of III-N-V/Si DJ cells are calculated with variable electron lifetime (τe) and electron surface recombination velocity (Se) in top cell. When Se is 100 cm/s and τe rises from 1 to 1000 ns, the optimal efficiency of GaNAsP/Si cell increases from 31.12% to 36.13% due to the increasing short-circuit current and open-circuit voltage. With τe of 100 ns, the optimal efficiency keeps at a high value of ~35% when Se changes from 10 to 1000 cm/s, but drops obviously with Se of 10000 cm/s. In comparison, the optimal efficiency of GaNAsP/Si cell is less sensitive to Se than to τe. With fixed Se of 100 cm/s, GaNAsP/Si cell shifts the optimal top-cell bandgap from 1.716 to 1.787 eV with adjustable top-base thickness when raising τe from 1 to 1000 ns. However, the effect of Se on optimal top-cell bandgap is negligible. For III-N-V/Si cell with 100-ns τe and 100-cm/s Se, an optimal efficiency is obtained as ~35.1%, which would be closer to the experimental limit owing to the expectable values of τe and Se. Furthermore, the optimal efficiency of GaNAsP/Si cell drops slightly when thinning Si substrate from 300 to 150 μm, but has a maximum of 35.95% with substrate doping of 1 × 1016 cm-3 when the doping concentration varies from 1 × 1015 cm-3 to 1 × 1018 cm-3. The results and discussion in this work may act as a guidance for studying III-N-V/Si DJ cell.

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A model for thermal annealing on forming In—N clusters in InGaNP

Zhao

Chen

et al. 2012

Sci. China Phys. Mech. Astron.

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Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy

Cited by 3 publications

References 9 publications

The parameters in the band-anticrossing model for In x Ga1−x N y P1−y before and after annealing

The parameters in the band-anticrossing model for In x Ga1−x N y P1−y before and after annealing

Theoretical investigation of lattice-matched III-N-V/Si double-junction solar cells

A model for thermal annealing on forming In—N clusters in InGaNP

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