The parameters in the band-anticrossing model for In x Ga1−x N y P1−y before and after annealing

Abstract

We investigate the parameters in the band-anticrossing (BAC) model for GaNP and InGaPN in this work. The parameters in the BAC model for GaNP and InGaNP are obtained by fitting experimental data. It is found that the band gap bowing of InGaNP is stronger than that of InGaNAs. The effects of annealing on the parameters in the BAC model for InGaNP are also discussed in this work. In addition, the origins for improving luminescence efficiency by annealing are explained. It is relative to the forming of more In-N clusters. InGaNP, band gap bowing, annealingPACS: 78.20.Bh III-V dilute nitride semiconductors have attracted much attention due to their potential applications in microelectronic and optoelectronic devices. Among the newest members of the dilute nitrides family, In x Ga 1x N y P 1y has been suggested as a material for GaInP/GaAs based Heterojunction Bipolar Transistors (HBTs). We know that the incorporation of a small amount of nitrogen in GaN and InGaAs can lead to huge band gap bowing [1]. It has been found that incorporating nitrogen into GaP and InGaP has a similar effect [2][3][4]. Shan et al.[1] successfully used the bandanticrossing (BAC) model to describe the dependence of the band gap energy of InGaNAs on its composition. The BAC model can be also used to describe the dependence of the band gap energy of GaPN and InGaNP on their compositions [2][3][4]. For GaNP, the parameters in the BAC model have been given by several groups [3-4], but the difference of their results is obvious. For InGaNP, as far as we know, the parameters in the BAC model needed to be further verified accurately due to the limited experimental data and poor accuracy of InGaNP alloy content. In addition, the effects of annealing on the parameters in the BAC model are seldom discussed. In this paper, we summarize the work done by other groups and obtain the parameters in the BAC model at room temperature for GaN y P 1y and In x Ga 1x N y P 1y . The annealing effects on the parameters in the BAC model for InGaNP and the origin for improving luminescence efficiency after annealing are also discussed.

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