InGaAs/GaAsSb type-II quantum-well focal plane array with cutoff-wavelength of 2.5 μm

Kawahara, Takahiko; Machinaga, Ken-ichi; Balasekaran, Sundararajan; Miura, K.; Migita, Masaki; Obi, Hiroshi; Fuyuki, Takuma; Fujii, Keiji; Ishizuka, Takashi; Ishiguro, Hiroshi; Iguchi, Yasuhiro

doi:10.1117/12.2254566

Cited by 4 publications

(1 citation statement)

References 9 publications

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“…For the applications in areas such as chemical sensing, gas monitoring and infrared imaging, it would be more desirable to extend the detection wavelength beyond 1.7 μm. Longer detection wavelength can be achieved by using Indium-rich InGaAs materials [4][5][6][7] or InGaAs/ GaAsSb type-II multiple quantum wells (MQW) structures [8][9][10][11][12][13][14][15][16][17]. For example, Hamamatsu [18] sells an uncooled Inrich InGaAs PD with cutoff wavelength of 2.6 μm, peak responsivity of 1.3 A W −1 .…”

Section: Introductionmentioning

confidence: 99%

Deep levels analysis in wavelength extended InGaAsBi photodetector

Huang

Chen

Yuan

et al. 2019

Semicond. Sci. Technol.

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InP based dilute Bismide InGaAsBi material is emerging as a promising candidate for extending short wavelength infrared detection. One critical factor to limit the performance of these InGaAsBi photodiodes is dark current caused by defects within the material. In this work, low frequency noise spectroscopy (LFNS) and temperature varied photoluminescence was used to characterize the defect levels in the devices. Three deep levels located at E c -0.33 eV, E v +0.14 eV, and E c -0.51 eV were identified from the LFNS spectra, which are consistent with emission peak energy found by photoluminescence spectra of InGaAsBi.

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