InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice

Wang, Jingyi; Xie, Zhiyang; Zhu, Liqi; Zou, Xinbo; Zhao, Xuyi; Yu, Wenfu; Liu, Ruotao; Du, Anyan; Gong, Qian; Chen, Baile

doi:10.1109/led.2022.3162246

Cited by 8 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In pursuit of broadband photodetection, narrow-bandgap semiconductors such as InGaAs 5 and HgCdTe 6 have been extensively employed in both laboratory and commercial infrared PD fabrication. However, their complex preparation processes, high costs, low linear dynamic range, and low-temperature operating conditions have restricted their widespread adoption.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast and broadband photodetection based on selenized AgSbS₂ thin films prepared by spray pyrolysis deposition and modified with indium nitrate

Zhang,

Cheng,

Yang

et al. 2024

J. Mater. Chem. A

View full text Add to dashboard Cite

show abstract

Section: Introductionmentioning

confidence: 99%

Ultrafast and broadband photodetection based on selenized AgSbS₂ thin films prepared by spray pyrolysis deposition and modified with indium nitrate

Zhang,

Cheng,

Yang

et al. 2024

J. Mater. Chem. A

View full text Add to dashboard Cite

show abstract

“…For example, a 0.6% strain-compensation in a 5 nm/5 nm InGaAs/GaAsSb T2SL increases the room temperature λ c from 2.6 to 2.8 µm [14]. Other researchers have explored recessed optical windows to increase quantum efficiency [15].…”

Section: Introductionmentioning

confidence: 99%

Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb type-II superlattice photodiodes

Petticrew

Han

et al. 2022

Semicond. Sci. Technol.

View full text Add to dashboard Cite

InGaAs/GaAsSb type-II superlattice (T2SL) photodiodes grown on InP substrates are an alternative detector technology for applications operating in the short wavelength infrared (SWIR) band. Their cut-off wavelengths are heavily influenced by the thickness and material composition of InGaAs and GaAsSb used in the T2SL. We present a single band k.p. model performed using a finite difference approach in nextnano validated against two T2SL photodiode wafers and results from literature. These photodiode wafers cover both lattice matched and strained GaAs1-xSbx compositions (x = 0.40, wafer A and 0.49, wafer B). The validation data covers temperature dependence of cut-off wavelengths (obtained from phase-sensitive photo response data) from 200 K to room temperature. The cut-off wavelengths were found to reduce at 1.32 nm/K for wafer A and 1.07 nm/K for wafer B. Good agreement was achieved between the validation data and nextnano simulations, after altering the GaAs1-xSbx valance band offset bowing parameter to -1.06 eV. Using this validated model, we show that the wavefunction overlap drops significantly if the GaAsSb barrier is thicker than the InGaAs well layer, hence defining the upper limit of the barrier layer. This validated model is then used to demonstrate that there is a linear dependence between the maximum achievable wavefunction overlap and cut-off wavelength of a lattice matched InGaAs/GaAsSb T2SL. We also found that the adoption of a 5 nm/3 nm InGaAs/GaAsSb T2SL structure offers an improved wavefunction overlap over the more common 5 nm/ 5 nm InGaAs/GaAsSb T2SL designs. The data reported in this paper is available from doi: 10.15131/shef.data.20310591.

show abstract

Study of In0.55Ga0.45As/GaAs0.15Sb0.85/In0.1Ga0.9As DQW heterostructure for designing IR-optoelectronic devices

Quraishi,

Ezzeldien,

Kattayat

et al. 2024

Optik

View full text Add to dashboard Cite

InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice

Cited by 8 publications

References 16 publications

Ultrafast and broadband photodetection based on selenized AgSbS₂ thin films prepared by spray pyrolysis deposition and modified with indium nitrate

Ultrafast and broadband photodetection based on selenized AgSbS₂ thin films prepared by spray pyrolysis deposition and modified with indium nitrate

Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb type-II superlattice photodiodes

Study of In0.55Ga0.45As/GaAs0.15Sb0.85/In0.1Ga0.9As DQW heterostructure for designing IR-optoelectronic devices

Contact Info

Product

Resources

About

InP-Based Broadband Photodetectors With InGaAs/GaAsSb Type-II Superlattice

Cited by 8 publications

References 16 publications

Ultrafast and broadband photodetection based on selenized AgSbS2 thin films prepared by spray pyrolysis deposition and modified with indium nitrate

Ultrafast and broadband photodetection based on selenized AgSbS2 thin films prepared by spray pyrolysis deposition and modified with indium nitrate

Characterisation, modelling and design of cut-off wavelength of InGaAs/GaAsSb type-II superlattice photodiodes

Study of In0.55Ga0.45As/GaAs0.15Sb0.85/In0.1Ga0.9As DQW heterostructure for designing IR-optoelectronic devices

Contact Info

Product

Resources

About

Ultrafast and broadband photodetection based on selenized AgSbS₂ thin films prepared by spray pyrolysis deposition and modified with indium nitrate

Ultrafast and broadband photodetection based on selenized AgSbS₂ thin films prepared by spray pyrolysis deposition and modified with indium nitrate