InGaAs/GaAsSb interband tunneling FETs as tunable RF detectors

Li, W.; Yu, Ting; Hoyt, Judy L.; Fay, P.

doi:10.1109/drc.2014.6872280

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“…Interband tunneling devices could impact technology by increasing the efficiency of visible LEDs 9,10 and ultraviolet LEDs 11 , and by enabling devices for applications such as logic. 12 Negative differential resistance, which has not been observed yet in GaN tunnel junctions, could also enable new device paradigms for logic and high frequency applications.…”

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confidence: 99%

Low-resistance GaN tunnel homojunctions with 150 kA/cm2 current and repeatable negative differential resistance

Akyol

Krishnamoorthy

Zhang

et al. 2016

Applied Physics Letters

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We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were increased. Hysteresis-free, bidirectional negative differential resistance was observed at room temperature from these junctions at a forward voltage of ~1.6-2 V. Thermionic PN junctions with tunnel contact to the p-layer exhibited forward current density of 150 kA/cm 2 at 7.6 V, with a low series device resistance of 1 x 10 -5 ohm.cm 2 .

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confidence: 99%