A Continuous Compact DC Model for Dual-Independent-Gate FinFETs

Hasan, Mohamed Noor; Gaillardon, Pierre-Emmanuel; Sensale‐Rodriguez, Berardi

doi:10.1109/jeds.2016.2632709

Cited by 8 publications

(2 citation statements)

References 24 publications

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“…Researchers have developed many models for the characteristics of MG-FinFETs [15][16][17], but to the best of our knowledge, none of the models take into account the effect of channel height on the device characteristics. In this paper, a DC model is presented for MG-FinFETs by considering a 3-D field distribution inside the channel.…”

Section: Introductionmentioning

confidence: 99%

An analytical model to assess DC characteristics of independent gate Si FinFETs

Ahmed¹,

Ahmed²

2019

Turk J Elec Eng & Comp Sci

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In this paper, Poisson's equation is utilized to find the potential distribution inside the channel of an independent gate FinFET device by adding the effect of channel height. The channel height of the device plays an important role in surface potential calculation when top gate voltage is applied. Using surface potential, an I − V model is developed, which can find the device current both in linear and saturation regions of operation. The model is tested on devices of different dimensions and good agreement between modeled and simulated results is observed, which validates the authenticity of the proposed model.

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Section: Introductionmentioning

confidence: 99%

An analytical model to assess DC characteristics of independent gate Si FinFETs

Ahmed¹,

Ahmed²

2019

Turk J Elec Eng & Comp Sci

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“…The analytical current calculations on the basis of drift-diffusion model do not properly take into account the effect of SB tunneling and BTBT on the electron transport [25], [26]. The empirical continuous compact dc model based on a set of empirical fitting parameters is reliable in the framework of experimental data [27], but it cannot be used for predictions.…”

Section: Introductionmentioning

confidence: 99%

Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors

Bejenari

2019

Preprint

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A simple model based on the WKB approximation for one-dimensional ballistic multi-gate reconfigurable fieldeffect transistors (RFETs) with Schottky-Barrier contacts has been developed for the drain current taking into account electron and hole band-to-band tunneling. By using a proper approximation of both the Fermi-Dirac distribution function and transmission probability, an analytical solution for the Landauer integral can be obtained. A comparative analysis of the twogate and triple-gate RFETs is performed based on the numerical integration of the current integral.Index Terms-Carbon-nanotube field-effect transistor (CNT-FET), analytical transport model, Schottky barrier (SB), bandto-band tunneling (BTBT), Wentzel-Kramers-Brillouin (WKB) approximation.

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